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If you are in the market for NSN 5961-00-062-0208 supplies that are routinely offered with affordable pricing and prompt delivery, turn to AI NSN Parts. On this page, you will find popular part numbers like 530160-2, 131034-001, 1N823A, F00001-12, 013-625, and others that are available for procurement at any time. Be sure to browse our NSN 5961-00-062-0208 inventory as you see fit, and if you come across any item that grabs your attention, click on the “RFQ” button situated alongside it to access our online quote request service. Within 15 minutes of receiving your RFQ submission, one of our experts will supply you with a customized response that matches your specifications.
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| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-062-0208 (000620208) |
| NCB Code | USA (00) |
| Manufacturer | Raytheon Company, Harris Corporation, Telcom Semiconductor Inc, Trw Electronic Components, Ampex Systems Corp, Western Semiconductors Div, Silicon Transistor Corp, Hekimian Laboratories Inc, Wavetek U S Inc, Microsemi Corporation, Beacon Industries Inc, Tdk Lambda Ltd, International Diode Corp, Electronic Industries Inc, Slater Electric Inc, C O D I Corp, Gilbert Engineering Co Inc, Military Specifications, Digitec Corp, Thales Sa, Freescale Semiconductor Inc, Adelco Elektronik Gmbh, Spx Corporation, Trw Limited |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 530160-2 | raytheon company | semiconductor device diode | RFQ |
| 131034-001 | harris corporation | semiconductor device diode | RFQ |
| 1N823A | telcom semiconductor inc | semiconductor device diode | RFQ |
| F00001-12 | raytheon company | semiconductor device diode | RFQ |
| 1N823A | trw electronic components | semiconductor device diode | RFQ |
| 013-625 | ampex systems corp | semiconductor device diode | RFQ |
| 1N823A | western semiconductors div | semiconductor device diode | RFQ |
| 1N823A | silicon transistor corp | semiconductor device diode | RFQ |
| 03C00823A | hekimian laboratories inc | semiconductor device diode | RFQ |
| 4801-01-0823 | wavetek u s inc | semiconductor device diode | RFQ |
| 1N823A | ampex systems corp | semiconductor device diode | RFQ |
| 1N823A | microsemi corporation | semiconductor device diode | RFQ |
| Q531784312 | beacon industries inc | semiconductor device diode | RFQ |
| 66003004 | tdk lambda ltd | semiconductor device diode | RFQ |
| 1N823A | international diode corp | semiconductor device diode | RFQ |
| 1N823A | electronic industries inc | semiconductor device diode | RFQ |
| 1N823A | slater electric inc | semiconductor device diode | RFQ |
| 1N823A | c o d i corp | semiconductor device diode | RFQ |
| 1N823A | raytheon company | semiconductor device diode | RFQ |
| 1N823A | gilbert engineering co inc | semiconductor device diode | RFQ |
| RELEASE 3109 | electronic industries inc | semiconductor device diode | RFQ |
| 1N823A | military specifications | semiconductor device diode | RFQ |
| 05010000 | digitec corp | semiconductor device diode | RFQ |
| 99194385 | thales sa | semiconductor device diode | RFQ |
| 1N823A | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N823AA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 9005-4-1 | spx corporation | semiconductor device diode | RFQ |
| 1N823A | trw limited | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| Relevant Components for NSN - 5961-00-062-0208, 5961000620208 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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