AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-081-6103 (000816103) |
| NCB Code | USA (00) |
| Manufacturer | Dare Electronics Inc, Thales Sa, Excelitas Technologies Corp, Thales Defense And Security Inc, Gte Communication Systems Corp, British Aerospace Inc, Military Specifications, Dne Technologies Inc, Transitron Electronic Gmbh, Raytheon Company, Adelco Elektronik Gmbh, Rolm Corp, L 3 Communications Corporation, Lockheed Martin Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 231051051 | dare electronics inc | semiconductor device diode | RFQ |
| 99094011 | thales sa | semiconductor device diode | RFQ |
| 1740 And 1 And A | excelitas technologies corp | semiconductor device diode | RFQ |
| 848110-0001 | thales defense and security inc | semiconductor device diode | RFQ |
| 756-00670-01 | gte communication systems corp | semiconductor device diode | RFQ |
| 415 4 05772 002 | british aerospace inc | semiconductor device diode | RFQ |
| MIL-PRF-19500/159 | military specifications | semiconductor device diode | RFQ |
| 1N823 | military specifications | semiconductor device diode | RFQ |
| 1740-1-A | excelitas technologies corp | semiconductor device diode | RFQ |
| 40020357-000 | dne technologies inc | semiconductor device diode | RFQ |
| 1N823 | transitron electronic gmbh | semiconductor device diode | RFQ |
| 0000-10-0279 | raytheon company | semiconductor device diode | RFQ |
| JAN1N823A | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 102829-01 | rolm corp | semiconductor device diode | RFQ |
| MIL-S-19500/159 | military specifications | semiconductor device diode | RFQ |
| JAN1N823 | military specifications | semiconductor device diode | RFQ |
| 85353 | l 3 communications corporation | semiconductor device diode | RFQ |
| 7901093-01 | lockheed martin corporation | semiconductor device diode | RFQ |
| USN1N823 | lockheed martin corporation | semiconductor device diode | RFQ |
| 4178600-189 | raytheon company | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.89 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.51 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/159 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-081-6103, 5961000816103 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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