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If you are in the market for NSN 5961-00-082-4020 supplies that are routinely offered with affordable pricing and prompt delivery, turn to AI NSN Parts. On this page, you will find popular part numbers like 121-0091, JAN1N3825A, 5961PL1454552, HSM48-21-25173 PG6-36 REF VR1, 1N3825, and others that are available for procurement at any time. Be sure to browse our NSN 5961-00-082-4020 inventory as you see fit, and if you come across any item that grabs your attention, click on the “RFQ” button situated alongside it to access our online quote request service. Within 15 minutes of receiving your RFQ submission, one of our experts will supply you with a customized response that matches your specifications.
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| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-082-4020 (000824020) |
| NCB Code | USA (00) |
| Manufacturer | Kepco Inc, Military Specifications, Inspektorat Wsparcia Sil Zbrojnych, Freescale Semiconductor Inc, Gilbert Engineering Co Inc, Tdk Lambda Ltd, Adelco Elektronik Gmbh, Fairchild Semiconductor Corp, E2v Semiconductors, Electronic Industries Inc, Infineon Technologies, Alcatel Lucent, Picatinny Arsenal, Joint Army-Navy Specifications, Raytheon Company, Minnesota Mining And Mfg Co |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 121-0091 | kepco inc | semiconductor device diode | RFQ |
| JAN1N3825A | military specifications | semiconductor device diode | RFQ |
| 5961PL1454552 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| HSM48-21-25173 PG6-36 REF VR1 | kepco inc | semiconductor device diode | RFQ |
| 1N3825 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N3825A | freescale semiconductor inc | semiconductor device diode | RFQ |
| HSM48-21-25173 PG6-9 REF VR2 | kepco inc | semiconductor device diode | RFQ |
| SV804 | gilbert engineering co inc | semiconductor device diode | RFQ |
| 1N3825 | military specifications | semiconductor device diode | RFQ |
| 113697-005 | tdk lambda ltd | semiconductor device diode | RFQ |
| JAN1N3825AA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 1N3825A | fairchild semiconductor corp | semiconductor device diode | RFQ |
| MIL-S-19500/115 | military specifications | semiconductor device diode | RFQ |
| 11Z4 | e2v semiconductors | semiconductor device diode | RFQ |
| J1N3825A | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N3825A | electronic industries inc | semiconductor device diode | RFQ |
| 1N1519A | infineon technologies | semiconductor device diode | RFQ |
| RD5A | alcatel lucent | semiconductor device diode | RFQ |
| 8861277 | picatinny arsenal | semiconductor device diode | RFQ |
| JANTX1N3825 | military specifications | semiconductor device diode | RFQ |
| JAN1N3825A | joint army-navy specifications | semiconductor device diode | RFQ |
| 4178600-326 | raytheon company | semiconductor device diode | RFQ |
| Z3B470BF | alcatel lucent | semiconductor device diode | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | RFQ |
| 83-1530-0211 | minnesota mining and mfg co | semiconductor device diode | RFQ |
| 322-1186P1 | raytheon company | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 970.00 MILLIAMPERES MAXIMUM REVERSE CURRENT,INSTANTANEOUS AND 194.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-082-4020, 5961000824020 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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