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Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-106-1613 (001061613) |
NCB Code | USA (00) |
Manufacturer | Raytheon Company, Solid State Devices Inc, Military Specifications, Boeing Company The, Semitronics Corp, Commanding Officer, Joint Electron Device Engineering, Itt Semiconductors, International Diode Corp, Lockheed Martin Corporation, Gilbert Engineering Co Inc, Nimikkeistokeskus Ncb Finland, Drs Signal Solutions Inc, Electronic Industries Inc |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
1N191 | raytheon company | semiconductor device diode | RFQ |
1N933 | solid state devices inc | semiconductor device diode | RFQ |
JAN1N191 | military specifications | semiconductor device diode | RFQ |
322-1028P3 | raytheon company | semiconductor device diode | RFQ |
HD2135A | boeing company the | semiconductor device diode | RFQ |
MILS19500-119 | military specifications | semiconductor device diode | RFQ |
1N933 | semitronics corp | semiconductor device diode | RFQ |
1N191 | commanding officer | semiconductor device diode | RFQ |
1N933 | joint electron device engineering | semiconductor device diode | RFQ |
1N933 | itt semiconductors | semiconductor device diode | RFQ |
1N933 | international diode corp | semiconductor device diode | RFQ |
G265283-1 | raytheon company | semiconductor device diode | RFQ |
67200-1N198 | lockheed martin corporation | semiconductor device diode | RFQ |
1N933 | gilbert engineering co inc | semiconductor device diode | RFQ |
425-2629 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
322-1028P1 | raytheon company | semiconductor device diode | RFQ |
1N198A | drs signal solutions inc | semiconductor device diode | RFQ |
JAN1N933 | military specifications | semiconductor device diode | RFQ |
RELEASE3744 | electronic industries inc | semiconductor device diode | RFQ |
322-1071P1 | raytheon company | semiconductor device diode | RFQ |
1N933 | electronic industries inc | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE,PEAK |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM FORWARD CURRENT,DC |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 75.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GERMANIUM SEMICONDUCTOR |
MATT | MATERIAL | GLASS INCLOSURE |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE3744 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
Relevant Components for NSN - 5961-00-106-1613, 5961001061613 | ||||
5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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