AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-175-8467 (001758467) |
| NCB Code | USA (00) |
| Manufacturer | Military Specifications, Plath Gmbh, Data General Corp, Siemens Energy And Automation Inc, Itt Semiconductors, Adelco Elektronik Gmbh, Thales Nederland Bv, Raytheon Company, Inspektorat Wsparcia Sil Zbrojnych, Motorola Inc, Boeing Company The, Thales Optronics Limited, Allied Signal Inc, Surco Inc, Telcom Semiconductor Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| JAN1N4150 | military specifications | semiconductor device diode | RFQ |
| 505-244 | plath gmbh | semiconductor device diode | RFQ |
| MIL-S-19500/231 | military specifications | semiconductor device diode | RFQ |
| 101000002 | data general corp | semiconductor device diode | RFQ |
| 53A0040 | siemens energy and automation inc | semiconductor device diode | RFQ |
| WG1377 | itt semiconductors | semiconductor device diode | RFQ |
| JAN1N4150A | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 3522 500 08716 | thales nederland bv | semiconductor device diode | RFQ |
| MIL-PRF-19500/231 | military specifications | semiconductor device diode | RFQ |
| 4178600-553 | raytheon company | semiconductor device diode | RFQ |
| 5961PL0805906 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| JAN1N4150 | motorola inc | semiconductor device diode | RFQ |
| 1N4150 | military specifications | semiconductor device diode | RFQ |
| 479-1239-001 | boeing company the | semiconductor device diode | RFQ |
| S600 1005A | thales optronics limited | semiconductor device diode | RFQ |
| 1585247-2 | allied signal inc | semiconductor device diode | RFQ |
| 1N4150 | surco inc | semiconductor device diode | RFQ |
| FDH600 | telcom semiconductor inc | semiconductor device diode | RFQ |
| S600 1005A | thales nederland bv | semiconductor device diode | RFQ |
| 000-8002-764 | boeing company the | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MINIMUM BREAKDOWN VOLTAGE,DC |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/231 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-175-8467, 5961001758467 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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