AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-295-5757 (002955757) |
| NCB Code | USA (00) |
| Manufacturer | Electronic Industries Inc, Fairchild Semiconductor Corp, Empire Generator Corporation, Hollingsworth John R Co, Westinghouse Electric Corp, Adelco Elektronik Gmbh, Dynalec Corporation, Finmeccanica Spa Helicopters, General Semiconductor Inc, Avago Technologies Us Inc, Nimikkeistokeskus Ncb Finland, Hewlett-Packard Company, Lacon Electronic Gmbh, Miller Electric Mfg Co, Slater Electric Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| RELEASE 5729 | electronic industries inc | semiconductor device diode | RFQ |
| 1N5406 | fairchild semiconductor corp | semiconductor device diode | RFQ |
| 450-2050 | empire generator corporation | semiconductor device diode | RFQ |
| JHP124-019 | hollingsworth john r co | semiconductor device diode | RFQ |
| 1N5406 | westinghouse electric corp | semiconductor device diode | RFQ |
| 1N5406 | electronic industries inc | semiconductor device diode | RFQ |
| 1N5406A | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 60090-183 | dynalec corporation | semiconductor device diode | RFQ |
| 840DR0002 | finmeccanica spa helicopters | semiconductor device diode | RFQ |
| 1N5406 | general semiconductor inc | semiconductor device diode | RFQ |
| 1901-0759 | avago technologies us inc | semiconductor device diode | RFQ |
| 1N5406 | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 403-5254 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
| 1901-0759 | hewlett-packard company | semiconductor device diode | RFQ |
| 1N5406 | lacon electronic gmbh | semiconductor device diode | RFQ |
| 027369 | miller electric mfg co | semiconductor device diode | RFQ |
| 1N5406 | slater electric inc | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ABHP | OVERALL LENGTH | 0.375 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.125 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.210 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 800.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM FORWARD CURRENT,AVERAGE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 170.0 DEG CELSIUS CASE |
| Relevant Components for NSN - 5961-00-295-5757, 5961002955757 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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