AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-356-2978 (003562978) |
| NCB Code | USA (00) |
| Manufacturer | Military Specifications, Zenith Electronics Corporation, Telecom Technologies Inc, Bae Systems Inc, Veeco Instruments Inc, Electronic Industries Inc, Huntron Inc, Westinghouse Electric Corp, Systron Donner Inertial Inc, General Instrument Corporation, Dynarad Corp, St Semicon Inc, Joint Army-Navy Specifications, Raytheon Company, Sensitron Inc, Spx Corporation, L 3 Communications Corporation, Hewlett-Packard Company, Texas Instruments Inc, Honeywell International Inc, Lockheed Martin Corporation, Joint Electron Device Engineering, Elsag Bailey Inc, Eaton Aerospace Ltd, Dynalec Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N3255 | military specifications | semiconductor device diode | RFQ |
| 212-76 | zenith electronics corporation | semiconductor device diode | RFQ |
| 211-38246 | telecom technologies inc | semiconductor device diode | RFQ |
| JAN1N4005G | military specifications | semiconductor device diode | RFQ |
| 7012302P002 | bae systems inc | semiconductor device diode | RFQ |
| 1N4005 | veeco instruments inc | semiconductor device diode | RFQ |
| IN4005 | electronic industries inc | semiconductor device diode | RFQ |
| 04-4012 | huntron inc | semiconductor device diode | RFQ |
| IN3613 | military specifications | semiconductor device diode | RFQ |
| 585F311PC27 | westinghouse electric corp | semiconductor device diode | RFQ |
| CR0284 | systron donner inertial inc | semiconductor device diode | RFQ |
| 1N4005 | general instrument corporation | semiconductor device diode | RFQ |
| 300002 | dynarad corp | semiconductor device diode | RFQ |
| 1N4005 | st semicon inc | semiconductor device diode | RFQ |
| JAN1N3613 | joint army-navy specifications | semiconductor device diode | RFQ |
| 531138-3 | raytheon company | semiconductor device diode | RFQ |
| 1N3191 | military specifications | semiconductor device diode | RFQ |
| 1N3613 | military specifications | semiconductor device diode | RFQ |
| 414955-8 | raytheon company | semiconductor device diode | RFQ |
| 1N4005 | sensitron inc | semiconductor device diode | RFQ |
| 1N2117 | raytheon company | semiconductor device diode | RFQ |
| A23149-4 | spx corporation | semiconductor device diode | RFQ |
| 1N3255 | l 3 communications corporation | semiconductor device diode | RFQ |
| 1N4005 | hewlett-packard company | semiconductor device diode | RFQ |
| JAN1N4005 | military specifications | semiconductor device diode | RFQ |
| 8879000054-1 | texas instruments inc | semiconductor device diode | RFQ |
| 653-520-9005 | honeywell international inc | semiconductor device diode | RFQ |
| 822747 | lockheed martin corporation | semiconductor device diode | RFQ |
| JAN 1N 4005 | joint electron device engineering | semiconductor device diode | RFQ |
| 507A996H01 | westinghouse electric corp | semiconductor device diode | RFQ |
| MIL-S-19500/427 | military specifications | semiconductor device diode | RFQ |
| 1946577A1 | elsag bailey inc | semiconductor device diode | RFQ |
| IN4005 | eaton aerospace ltd | semiconductor device diode | RFQ |
| JANTX1N3613 | military specifications | semiconductor device diode | RFQ |
| 16102-011 | dynalec corporation | semiconductor device diode | RFQ |
| 200490-703 | bae systems inc | semiconductor device diode | RFQ |
| MIL-PRF-19500/228 | military specifications | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | MRAP-COUGAR CAT1 A2 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-356-2978, 5961003562978 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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