AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-356-2978 (003562978) |
| NCB Code | USA (00) |
| Manufacturer | St Semicon Inc, Zenith Electronics Corporation, Raytheon Company, Lockheed Martin Corporation, Bae Systems Inc, Eaton Aerospace Ltd, Hewlett-Packard Company, Systron Donner Inertial Inc, Veeco Instruments Inc, Military Specifications, Elsag Bailey Inc, Dynalec Corporation, Honeywell International Inc, Telecom Technologies Inc, Spx Corporation, Texas Instruments Inc, Joint Army-Navy Specifications, Sensitron Inc, General Instrument Corporation, Joint Electron Device Engineering, Huntron Inc, Westinghouse Electric Corp, Electronic Industries Inc, Dynarad Corp, L 3 Communications Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N4005 | st semicon inc | semiconductor device diode | RFQ |
| 212-76 | zenith electronics corporation | semiconductor device diode | RFQ |
| 414955-8 | raytheon company | semiconductor device diode | RFQ |
| 822747 | lockheed martin corporation | semiconductor device diode | RFQ |
| 200490-703 | bae systems inc | semiconductor device diode | RFQ |
| 531138-3 | raytheon company | semiconductor device diode | RFQ |
| IN4005 | eaton aerospace ltd | semiconductor device diode | RFQ |
| 1N4005 | hewlett-packard company | semiconductor device diode | RFQ |
| CR0284 | systron donner inertial inc | semiconductor device diode | RFQ |
| 1N4005 | veeco instruments inc | semiconductor device diode | RFQ |
| 1N3191 | military specifications | semiconductor device diode | RFQ |
| 1946577A1 | elsag bailey inc | semiconductor device diode | RFQ |
| 16102-011 | dynalec corporation | semiconductor device diode | RFQ |
| JAN1N4005 | military specifications | semiconductor device diode | RFQ |
| 653-520-9005 | honeywell international inc | semiconductor device diode | RFQ |
| MIL-PRF-19500/228 | military specifications | semiconductor device diode | RFQ |
| 211-38246 | telecom technologies inc | semiconductor device diode | RFQ |
| A23149-4 | spx corporation | semiconductor device diode | RFQ |
| JANTX1N3613 | military specifications | semiconductor device diode | RFQ |
| MIL-S-19500/427 | military specifications | semiconductor device diode | RFQ |
| JAN1N4005G | military specifications | semiconductor device diode | RFQ |
| 8879000054-1 | texas instruments inc | semiconductor device diode | RFQ |
| JAN1N3613 | joint army-navy specifications | semiconductor device diode | RFQ |
| 1N4005 | sensitron inc | semiconductor device diode | RFQ |
| IN3613 | military specifications | semiconductor device diode | RFQ |
| 1N2117 | raytheon company | semiconductor device diode | RFQ |
| 1N4005 | general instrument corporation | semiconductor device diode | RFQ |
| JAN 1N 4005 | joint electron device engineering | semiconductor device diode | RFQ |
| 04-4012 | huntron inc | semiconductor device diode | RFQ |
| 585F311PC27 | westinghouse electric corp | semiconductor device diode | RFQ |
| 1N3255 | military specifications | semiconductor device diode | RFQ |
| IN4005 | electronic industries inc | semiconductor device diode | RFQ |
| 300002 | dynarad corp | semiconductor device diode | RFQ |
| 1N3255 | l 3 communications corporation | semiconductor device diode | RFQ |
| 7012302P002 | bae systems inc | semiconductor device diode | RFQ |
| 507A996H01 | westinghouse electric corp | semiconductor device diode | RFQ |
| 1N3613 | military specifications | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | MRAP-COUGAR CAT1 A2 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-356-2978, 5961003562978 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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