Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-403-3298 (004033298) |
NCB Code | USA (00) |
Manufacturer | Raytheon Company, Semicon Components Inc, Inspektorat Wsparcia Sil Zbrojnych, Lacon Electronic Gmbh, Adelco Elektronik Gmbh, Military Specifications, Electronic Industries Inc, Microsemi Corporation, Sylvania Electric Products Inc, Hamilton Sundstrand Corporation, Rockwell Collins Aerospace, Bae Systems Inc, Gilbert Engineering Co Inc, Edo Corporation, General Instrument Corporation, Lockheed Martin Corporation, Edal Industries Inc, Gec Alsthom Intl Inc, General Electric Company, Itt Semiconductors, Semtech Corporation |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
53809-8 | raytheon company | semiconductor device diode | RFQ |
1N3084 | semicon components inc | semiconductor device diode | RFQ |
5961PL0801493 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
JANTX1N5552 | lacon electronic gmbh | semiconductor device diode | RFQ |
JANTX1N5552A | adelco elektronik gmbh | semiconductor device diode | RFQ |
JAN1N5552 | military specifications | semiconductor device diode | RFQ |
1N3084 | electronic industries inc | semiconductor device diode | RFQ |
MIL-PRF-19500/420 | military specifications | semiconductor device diode | RFQ |
720665-5 | raytheon company | semiconductor device diode | RFQ |
JANTX1N5552 | microsemi corporation | semiconductor device diode | RFQ |
JANTX1N5626 | military specifications | semiconductor device diode | RFQ |
1N4385 | sylvania electric products inc | semiconductor device diode | RFQ |
5E4810 52-0003 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
RELEASE4182 | electronic industries inc | semiconductor device diode | RFQ |
JANTX1N5552 | adelco elektronik gmbh | semiconductor device diode | RFQ |
JAN1N3191 | military specifications | semiconductor device diode | RFQ |
353-9009-481 | rockwell collins aerospace | semiconductor device diode | RFQ |
A15MXR40 | bae systems inc | semiconductor device diode | RFQ |
JANTX1N3191 | military specifications | semiconductor device diode | RFQ |
JAN1N5626 | military specifications | semiconductor device diode | RFQ |
MIL-S-19500 | military specifications | semiconductor device diode | RFQ |
353-9019-030 | rockwell collins aerospace | semiconductor device diode | RFQ |
1N3084 | gilbert engineering co inc | semiconductor device diode | RFQ |
1N2071A | military specifications | semiconductor device diode | RFQ |
TX1N5552 | military specifications | semiconductor device diode | RFQ |
JANTX1N5552 | military specifications | semiconductor device diode | RFQ |
395940-3 | edo corporation | semiconductor device diode | RFQ |
MIL-S-19500/420 | military specifications | semiconductor device diode | RFQ |
1N5552 | general instrument corporation | semiconductor device diode | RFQ |
353-9009-482 | rockwell collins aerospace | semiconductor device diode | RFQ |
7904865-07 | lockheed martin corporation | semiconductor device diode | RFQ |
1N5552 | electronic industries inc | semiconductor device diode | RFQ |
1N3084 | edal industries inc | semiconductor device diode | RFQ |
CC5-726-120 | gec alsthom intl inc | semiconductor device diode | RFQ |
TR505 | general electric company | semiconductor device diode | RFQ |
1N3084 | itt semiconductors | semiconductor device diode | RFQ |
TX1N5552 | semtech corporation | semiconductor device diode | RFQ |
1N2863 | lockheed martin corporation | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.250 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.115 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 20.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
Relevant Components for NSN - 5961-00-403-3298, 5961004033298 | ||||
5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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