Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-403-5429 (004035429) |
NCB Code | USA (00) |
Manufacturer | Gte Communication Systems Corp, Texas Instruments Inc, General Electric Company, Rockwell Collins Aerospace, Electronic Industries Inc, Falco Data Products, Joint Army-Navy Specifications, Bae Systems Inc, Fsg Inc, Digital Development Corp, American Power Devices Inc, Eaton Corporation, Raytheon Company, Astec Industries Inc, Martin Marietta Corp, Military Specifications |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
174-14809-67 | gte communication systems corp | semiconductor device diode | RFQ |
1N4606 | texas instruments inc | semiconductor device diode | RFQ |
DJXR1556 | general electric company | semiconductor device diode | RFQ |
353-3656-010 | rockwell collins aerospace | semiconductor device diode | RFQ |
1N460W | electronic industries inc | semiconductor device diode | RFQ |
1N4606 | general electric company | semiconductor device diode | RFQ |
212-10700210 | falco data products | semiconductor device diode | RFQ |
JAN1N4606 | joint army-navy specifications | semiconductor device diode | RFQ |
1N4606 | bae systems inc | semiconductor device diode | RFQ |
F52005386 | fsg inc | semiconductor device diode | RFQ |
RELEASE4999 | electronic industries inc | semiconductor device diode | RFQ |
1N4606 | electronic industries inc | semiconductor device diode | RFQ |
54732-31 | digital development corp | semiconductor device diode | RFQ |
IN4607 | american power devices inc | semiconductor device diode | RFQ |
143136002 | eaton corporation | semiconductor device diode | RFQ |
405606-1 | raytheon company | semiconductor device diode | RFQ |
212-10700210 | astec industries inc | semiconductor device diode | RFQ |
1N4606 | martin marietta corp | semiconductor device diode | RFQ |
1N4606 | military specifications | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 85.0 MAXIMUM REVERSE VOLTAGE,PEAK |
CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE4999 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
Relevant Components for NSN - 5961-00-403-5429, 5961004035429 | ||||
5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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