AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-484-4613 (004844613) |
| NCB Code | USA (00) |
| Manufacturer | Military Specifications, Raytheon Company, Rockwell Collins Aerospace, Lockheed Martin Corporation, Asc Pty Ltd, Harsco Corporation, Dla Land And Maritime, Micro Uspd Inc, Ametek Inc, Interstate Electronics Corporation, Semtech Corporation, Honeywell International Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| TXIN4967 | military specifications | semiconductor device diode | RFQ |
| 925115-14B | raytheon company | semiconductor device diode | RFQ |
| 353-9023-140 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 7904864-52 | lockheed martin corporation | semiconductor device diode | RFQ |
| 353-9010-341 | rockwell collins aerospace | semiconductor device diode | RFQ |
| MIL-S-19500/356 | military specifications | semiconductor device diode | RFQ |
| ASC1534543 | asc pty ltd | semiconductor device diode | RFQ |
| 50805-5240-01 | harsco corporation | semiconductor device diode | RFQ |
| TX1N4967 | military specifications | semiconductor device diode | RFQ |
| L02262 | dla land and maritime | semiconductor device diode | RFQ |
| UZ9476 | micro uspd inc | semiconductor device diode | RFQ |
| UZ9299-14 | micro uspd inc | semiconductor device diode | RFQ |
| JAN1N4967 | micro uspd inc | semiconductor device diode | RFQ |
| JANTX1N4967 | military specifications | semiconductor device diode | RFQ |
| 6705W27P002 | ametek inc | semiconductor device diode | RFQ |
| 7529700-008 | interstate electronics corporation | semiconductor device diode | RFQ |
| SS4524 | semtech corporation | semiconductor device diode | RFQ |
| 1534862-7 | honeywell international inc | semiconductor device diode | RFQ |
| MIL-PRF-19500/356 | military specifications | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 24.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 198.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-484-4613, 5961004844613 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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