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Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-529-2685 (005292685) |
NCB Code | USA (00) |
Manufacturer | Lacon Electronic Gmbh, Raytheon Company, Telcom Semiconductor Inc, Military Specifications, Adelco Elektronik Gmbh, Joint Electron Device Engineering, Honeywell International Inc, Northrop Grumman Systems Corporation, Electronic Industries Inc, Joint Army-Navy Specifications, Harsco Corporation, Fairchild Semiconductor Corp, Hewlett-Packard Company, Alcatel Lucent, Central States Maintenance Inc, Freescale Semiconductor Inc, Bae Systems Inc |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
1N751B | lacon electronic gmbh | semiconductor device diode | RFQ |
F00001-50 | raytheon company | semiconductor device diode | RFQ |
1N751B | telcom semiconductor inc | semiconductor device diode | RFQ |
TX1N751A | military specifications | semiconductor device diode | RFQ |
1N751B | adelco elektronik gmbh | semiconductor device diode | RFQ |
1N751 | joint electron device engineering | semiconductor device diode | RFQ |
12043-0117 | honeywell international inc | semiconductor device diode | RFQ |
2088809-0072 | honeywell international inc | semiconductor device diode | RFQ |
1080H80H17 | northrop grumman systems corporation | semiconductor device diode | RFQ |
1N751B | electronic industries inc | semiconductor device diode | RFQ |
JAN1N751A | joint army-navy specifications | semiconductor device diode | RFQ |
1081H34H12 | northrop grumman systems corporation | semiconductor device diode | RFQ |
JAN1N751A | military specifications | semiconductor device diode | RFQ |
185-0065 | harsco corporation | semiconductor device diode | RFQ |
1N5231C | fairchild semiconductor corp | semiconductor device diode | RFQ |
1902-0041 | hewlett-packard company | semiconductor device diode | RFQ |
712 ITT 04020 SAAT | alcatel lucent | semiconductor device diode | RFQ |
1N751BA | adelco elektronik gmbh | semiconductor device diode | RFQ |
1N7518 | electronic industries inc | semiconductor device diode | RFQ |
2088809-72 | honeywell international inc | semiconductor device diode | RFQ |
168870-4 | central states maintenance inc | semiconductor device diode | RFQ |
1N751B | freescale semiconductor inc | semiconductor device diode | RFQ |
1N751A | harsco corporation | semiconductor device diode | RFQ |
1N751A | bae systems inc | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES NOMINAL |
ADAV | OVERALL DIAMETER | 0.115 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
Relevant Components for NSN - 5961-00-529-2685, 5961005292685 | ||||
5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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