AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-584-4505 (005844505) |
| NCB Code | USA (00) |
| Manufacturer | Agilent Technologies Inc, Fei Microwave Inc, Hewlett-Packard Company, Space Power Electronics Inc, Frequency Electronics Inc, Avago Technologies Us Inc, Electronic Industries Inc, Lacon Electronic Gmbh, Adelco Elektronik Gmbh, Leonardo Spa A Land And Naval, Raytheon Company, Nimikkeistokeskus Ncb Finland |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 5082-9149 | agilent technologies inc | semiconductor device diode | RFQ |
| 1N5165 | fei microwave inc | semiconductor device diode | RFQ |
| 5082-9149-1N5165 | hewlett-packard company | semiconductor device diode | RFQ |
| 1N5165 | space power electronics inc | semiconductor device diode | RFQ |
| 1N5165 | frequency electronics inc | semiconductor device diode | RFQ |
| 1N5165 | agilent technologies inc | semiconductor device diode | RFQ |
| 5082-9149-1N5165 | agilent technologies inc | semiconductor device diode | RFQ |
| 1N5165 | avago technologies us inc | semiconductor device diode | RFQ |
| 1N5165 | electronic industries inc | semiconductor device diode | RFQ |
| 1N5165 | lacon electronic gmbh | semiconductor device diode | RFQ |
| 1N5165 | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 1N5165A | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 5082-9149 | hewlett-packard company | semiconductor device diode | RFQ |
| 81C415M001 | leonardo spa a land and naval | semiconductor device diode | RFQ |
| RELEASE5407 | electronic industries inc | semiconductor device diode | RFQ |
| 178278-1 | raytheon company | semiconductor device diode | RFQ |
| 1N5165 | hewlett-packard company | semiconductor device diode | RFQ |
| 457-6009 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.165 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.075 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.0 MAXIMUM ON VOLTAGE,FORWARD VOLTAGE DROP,DC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
| CTRD | POWER RATING PER CHARACTERISTIC | 125.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5407 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| Relevant Components for NSN - 5961-00-584-4505, 5961005844505 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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