AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-688-6316 (006886316) |
| NCB Code | USA (00) |
| Manufacturer | Ward Leonard Electric Company Inc, Gilbert Engineering Co Inc, St Semicon Inc, Trio Laboratories Inc, Electronic Industries Inc, Semicon Components Inc, Dla Land And Maritime, Joint Army-Navy Specifications, J S Japanese Industrial, Northrop Grumman Systems Corporation, Military Specifications, Solitron Devices Inc, Thales Nederland Bv, Inspektorat Wsparcia Sil Zbrojnych, General Semiconductor Inc, Rca Ltd, Hamilton Sundstrand Corporation, Raytheon Company, Infineon Technologies, Freescale Semiconductor Inc, General Electric Company, Lockheed Martin Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N547 | ward leonard electric company inc | semiconductor device diode | RFQ |
| 1N547 | gilbert engineering co inc | semiconductor device diode | RFQ |
| 1N2482 | st semicon inc | semiconductor device diode | RFQ |
| 11856-23 | trio laboratories inc | semiconductor device diode | RFQ |
| 1N547M | electronic industries inc | semiconductor device diode | RFQ |
| JAN1N547 | semicon components inc | semiconductor device diode | RFQ |
| L02201 | dla land and maritime | semiconductor device diode | RFQ |
| JAN1N547 | joint army-navy specifications | semiconductor device diode | RFQ |
| 11856-21 | trio laboratories inc | semiconductor device diode | RFQ |
| 1S1943 | j s japanese industrial | semiconductor device diode | RFQ |
| 075040500 00 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 1N547W | military specifications | semiconductor device diode | RFQ |
| 1N547 | solitron devices inc | semiconductor device diode | RFQ |
| VBE890-1N547 | thales nederland bv | semiconductor device diode | RFQ |
| 5961PL0805261 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| JAN1N547 | military specifications | semiconductor device diode | RFQ |
| 352250009904 | thales nederland bv | semiconductor device diode | RFQ |
| 1N574M | military specifications | semiconductor device diode | RFQ |
| 1N1492 | military specifications | semiconductor device diode | RFQ |
| JAN1N547M | military specifications | semiconductor device diode | RFQ |
| MIL-S-19500/202 | military specifications | semiconductor device diode | RFQ |
| 1N2484 | st semicon inc | semiconductor device diode | RFQ |
| 1N547 | joint army-navy specifications | semiconductor device diode | RFQ |
| IN1696 | general semiconductor inc | semiconductor device diode | RFQ |
| 1N547 | rca ltd | semiconductor device diode | RFQ |
| 1N547 | semicon components inc | semiconductor device diode | RFQ |
| 903916C1 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
| 4178600-208 | raytheon company | semiconductor device diode | RFQ |
| 3HS1 | infineon technologies | semiconductor device diode | RFQ |
| 1N1256 | freescale semiconductor inc | semiconductor device diode | RFQ |
| MILS19500E1-202AJAN1 | military specifications | semiconductor device diode | RFQ |
| 1N5474 | general electric company | semiconductor device diode | RFQ |
| 1N2863 | electronic industries inc | semiconductor device diode | RFQ |
| 1654043-1REVA | lockheed martin corporation | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.800 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.310 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 720.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS AND 420.0 MAXIMUM REVERSE VOLTAGE,TOTAL RMS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 750.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/202 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-688-6316, 5961006886316 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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