AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-752-5351 (007525351) |
| NCB Code | USA (00) |
| Manufacturer | Rca Ltd, Texas Instruments Inc, Joint Army-Navy Specifications, Military Specifications, Picatinny Arsenal, Rockwell Collins Aerospace, Telcom Semiconductor Inc, Northrop Grumman Systems Corporation, General Instrument Corporation, L 3 Communications Corporation, Lockheed Martin Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 231856 | rca ltd | semiconductor device diode | RFQ |
| 1N643 | texas instruments inc | semiconductor device diode | RFQ |
| JANIN643 | joint army-navy specifications | semiconductor device diode | RFQ |
| JANIN643 | military specifications | semiconductor device diode | RFQ |
| JAN1N649 | joint army-navy specifications | semiconductor device diode | RFQ |
| 10962611 | picatinny arsenal | semiconductor device diode | RFQ |
| 353-2857-00 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 353-2857-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| CD2653 | telcom semiconductor inc | semiconductor device diode | RFQ |
| JAN1N643 | joint army-navy specifications | semiconductor device diode | RFQ |
| 579R762H01 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| JAN1N643 | military specifications | semiconductor device diode | RFQ |
| DR1672 | general instrument corporation | semiconductor device diode | RFQ |
| HD6565 | l 3 communications corporation | semiconductor device diode | RFQ |
| 1N643 | joint army-navy specifications | semiconductor device diode | RFQ |
| MIL-S-19500/256 | military specifications | semiconductor device diode | RFQ |
| 1N463 | joint army-navy specifications | semiconductor device diode | RFQ |
| 752949 | lockheed martin corporation | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAV | OVERALL DIAMETER | 0.077 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 175.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE,MAXIMUM PEAK TOTAL VALUE AND 200.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT,180 DEGREES CONDUCTION ANGLE,AVERAGE OVER A FULL 60-HZ CYCLE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/256 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-752-5351, 5961007525351 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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