AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-842-6181 (008426181) |
| NCB Code | USA (00) |
| Manufacturer | Military Specifications, Rolm Corp, Control Data Systems Inc, Infineon Technologies, Adelco Elektronik Gmbh, Raytheon Company, Dare Electronics Inc, Joint Electron Device Engineering, Freescale Semiconductor Inc, Gilbert Engineering Co Inc, Boonton Electronics Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| MILS19500-115B | military specifications | semiconductor device diode | RFQ |
| 108822-01 | rolm corp | semiconductor device diode | RFQ |
| 0050240311 | control data systems inc | semiconductor device diode | RFQ |
| MZ8-2T10 | infineon technologies | semiconductor device diode | RFQ |
| JAN1N3018BA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| JAN1N5237B | military specifications | semiconductor device diode | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | RFQ |
| 1N3018B | military specifications | semiconductor device diode | RFQ |
| 4178600-173 | raytheon company | semiconductor device diode | RFQ |
| 231051056 | dare electronics inc | semiconductor device diode | RFQ |
| JAN1N3018B-1 | military specifications | semiconductor device diode | RFQ |
| 1N3018A | joint electron device engineering | semiconductor device diode | RFQ |
| 1N1522A | infineon technologies | semiconductor device diode | RFQ |
| 1N3018B | freescale semiconductor inc | semiconductor device diode | RFQ |
| JAN1N5237A | military specifications | semiconductor device diode | RFQ |
| SV1011 | gilbert engineering co inc | semiconductor device diode | RFQ |
| 530125 | boonton electronics corporation | semiconductor device diode | RFQ |
| 1N3018A | freescale semiconductor inc | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 8.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 31.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 115.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| Relevant Components for NSN - 5961-00-842-6181, 5961008426181 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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