AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-849-4183 (008494183) |
| NCB Code | USA (00) |
| Manufacturer | Inspektorat Wsparcia Sil Zbrojnych, R F Power Labs Inc, Itt Telecom Products Corp, Rockwell Collins Aerospace, Ampex Systems Corp, Freescale Semiconductor Inc, Military Specifications, L 3 Communications Corporation, Trw Electronic Components, Thales Nederland Bv, Litton Systems Inc, Raytheon Company, Northrop Grumman Systems Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 5961PL1277787 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| 490052 | r f power labs inc | semiconductor device diode | RFQ |
| 0534336 | itt telecom products corp | semiconductor device diode | RFQ |
| 353-1161-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 013-628 | ampex systems corp | semiconductor device diode | RFQ |
| 1N2989A | freescale semiconductor inc | semiconductor device diode | RFQ |
| MIL-PRF-19500/124 | military specifications | semiconductor device diode | RFQ |
| JAN1N2989B | military specifications | semiconductor device diode | RFQ |
| MILS19500-124 | military specifications | semiconductor device diode | RFQ |
| 9300-256 | l 3 communications corporation | semiconductor device diode | RFQ |
| 1N2989A | trw electronic components | semiconductor device diode | RFQ |
| 353-1161-001 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 3522 500 10055 | thales nederland bv | semiconductor device diode | RFQ |
| 947090-9892 | litton systems inc | semiconductor device diode | RFQ |
| VBE890 1N2989B | thales nederland bv | semiconductor device diode | RFQ |
| 4178600-089 | raytheon company | semiconductor device diode | RFQ |
| 1N2989B | freescale semiconductor inc | semiconductor device diode | RFQ |
| GS810BN1 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.300 INCHES MINIMUM AND 0.405 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.60 AMPERES MAXIMUM PEAK REVERSE SURGE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS CASE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| Relevant Components for NSN - 5961-00-849-4183, 5961008494183 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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