AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-865-2063 (008652063) |
| NCB Code | USA (00) |
| Manufacturer | Raytheon Company, Thales Nederland Bv, Dla Land And Maritime, Te Ka De Felten, Freescale Semiconductor Inc, Racal Communications Systems Ltd, Military Specifications, Joint Army-Navy Specifications, Motorola Inc, Thales Uk Ltd, Adelco Elektronik Gmbh, Joint Electron Device Engineering, Yosemite Investment Inc, Inspektorat Wsparcia Sil Zbrojnych, Kearfott Corporation, Infineon Technologies |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 4178600-379 | raytheon company | semiconductor device diode | RFQ |
| VBE890-1N2970B | thales nederland bv | semiconductor device diode | RFQ |
| L03001 | dla land and maritime | semiconductor device diode | RFQ |
| 104 4114 156311 | te ka de felten | semiconductor device diode | RFQ |
| 48-14146A01 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 22-1845 | racal communications systems ltd | semiconductor device diode | RFQ |
| JAN1N2970B | military specifications | semiconductor device diode | RFQ |
| MIL-S-19500/124 | military specifications | semiconductor device diode | RFQ |
| 352250010038 | thales nederland bv | semiconductor device diode | RFQ |
| JAN1N2970B | joint army-navy specifications | semiconductor device diode | RFQ |
| 48-14146A01 | motorola inc | semiconductor device diode | RFQ |
| 22-1845 | thales uk ltd | semiconductor device diode | RFQ |
| JAN1N2970BA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| MIL-PRF-19500/124 | military specifications | semiconductor device diode | RFQ |
| 1N2970B | joint electron device engineering | semiconductor device diode | RFQ |
| 1N2970B | military specifications | semiconductor device diode | RFQ |
| 1N2970 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N2970A | yosemite investment inc | semiconductor device diode | RFQ |
| 1N2970B | joint army-navy specifications | semiconductor device diode | RFQ |
| 1N2970 | military specifications | semiconductor device diode | RFQ |
| 5961PL0991950 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| G181-616-0022 | kearfott corporation | semiconductor device diode | RFQ |
| 1N2970A | military specifications | semiconductor device diode | RFQ |
| 10Z6-8T10 | infineon technologies | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS AND 60.0 MAXIMUM REVERSE VOLTAGE,PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM FORWARD CURRENT,DC AND 250.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT,180 DEGREES CONDUCTION ANGLE,AVERAGE OVER A FULL 60-HZ CYCLE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| ADAV | OVERALL DIAMETER | 0.292 INCHES MINIMUM AND 0.296 INCHES MAXIMUM |
| MATT | MATERIAL | CERAMIC INCLOSURE |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 SOLDER STUD AND 1 TAB,SOLDER LUG |
| Relevant Components for NSN - 5961-00-865-2063, 5961008652063 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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