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If you are in the market for NSN 5961-00-879-2474 supplies that are routinely offered with affordable pricing and prompt delivery, turn to AI NSN Parts. On this page, you will find popular part numbers like 1N752A, 720670-28, MIL-PRF-19500/115, JAN1N3028B, 1N1429, and others that are available for procurement at any time. Be sure to browse our NSN 5961-00-879-2474 inventory as you see fit, and if you come across any item that grabs your attention, click on the “RFQ” button situated alongside it to access our online quote request service. Within 15 minutes of receiving your RFQ submission, one of our experts will supply you with a customized response that matches your specifications.
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| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-879-2474 (008792474) |
| NCB Code | USA (00) |
| Manufacturer | Military Specifications, Raytheon Company, Joint Electron Device Engineering, N A P Smd Technology Inc, Enersys Corporation, Navair And Navsea Managed, Thales Nederland Bv, Inspektorat Wsparcia Sil Zbrojnych, Freescale Semiconductor Inc, International Rectifier Corporation, Diamond Electronics Inc, Itt Federal Laboratories, Adelco Elektronik Gmbh, Gte Communication Systems Corp, Infineon Technologies, Aai Acl Technologies Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N752A | military specifications | semiconductor device diode | RFQ |
| 720670-28 | raytheon company | semiconductor device diode | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | RFQ |
| JAN1N3028B | military specifications | semiconductor device diode | RFQ |
| 1N1429 | military specifications | semiconductor device diode | RFQ |
| 1N3028A | military specifications | semiconductor device diode | RFQ |
| 1N3028B | joint electron device engineering | semiconductor device diode | RFQ |
| 1N3028B | military specifications | semiconductor device diode | RFQ |
| 1N1779A | n a p smd technology inc | semiconductor device diode | RFQ |
| R507-10-1 | enersys corporation | semiconductor device diode | RFQ |
| 1N30208B | military specifications | semiconductor device diode | RFQ |
| 2090254 | navair and navsea managed | semiconductor device diode | RFQ |
| VBE890-1N3028B | thales nederland bv | semiconductor device diode | RFQ |
| 5961PL1277846 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| 1N3028B | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N1516A | international rectifier corporation | semiconductor device diode | RFQ |
| 4178600-186 | raytheon company | semiconductor device diode | RFQ |
| 352250010091 | thales nederland bv | semiconductor device diode | RFQ |
| 847003-0020 | diamond electronics inc | semiconductor device diode | RFQ |
| 705000H138 | itt federal laboratories | semiconductor device diode | RFQ |
| JAN1N3028BA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| 174-26729-03 | gte communication systems corp | semiconductor device diode | RFQ |
| MZ22T5 | infineon technologies | semiconductor device diode | RFQ |
| 1N3028B | aai acl technologies inc | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| MATT | MATERIAL | GLASS INCLOSURE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ABHP | OVERALL LENGTH | 0.371 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 22.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 11.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 43.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/115 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-879-2474, 5961008792474 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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