AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-892-0919 (008920919) |
| NCB Code | USA (00) |
| Manufacturer | Freescale Semiconductor Inc, Military Specifications, Honeywell International Inc, Raytheon Company, Litton Systems Inc, Eca Etablissement Central Des, Adelco Elektronik Gmbh, Bauer Inc, Thales Nederland Bv, Boeing Aerostructures Australia Pty Ltd, Inspektorat Wsparcia Sil Zbrojnych, Thales Defense And Security Inc, Joint Army-Navy Specifications |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N3031 | freescale semiconductor inc | semiconductor device diode | RFQ |
| MIL-PRF-19500/115 | military specifications | semiconductor device diode | RFQ |
| 1801247-16 | honeywell international inc | semiconductor device diode | RFQ |
| 4178600-77 | raytheon company | semiconductor device diode | RFQ |
| 947179-312 | litton systems inc | semiconductor device diode | RFQ |
| 5961008920919 | eca etablissement central des | semiconductor device diode | RFQ |
| JAN1N3031BA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| JAN1N3031B | military specifications | semiconductor device diode | RFQ |
| 1N3033B | military specifications | semiconductor device diode | RFQ |
| MIL-S-19500/115 | military specifications | semiconductor device diode | RFQ |
| BMI3593-31 | bauer inc | semiconductor device diode | RFQ |
| 352250010094 | thales nederland bv | semiconductor device diode | RFQ |
| 353-3061-000 | boeing aerostructures australia pty ltd | semiconductor device diode | RFQ |
| 5961PL1277873 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| 848142-0301 | thales defense and security inc | semiconductor device diode | RFQ |
| VBE890 1N3031B | thales nederland bv | semiconductor device diode | RFQ |
| JAN1N3031B | joint army-navy specifications | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 31.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/115 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-892-0919, 5961008920919 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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