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Home   //   NSN Parts    //   NSN 5961009149740

Recently Updated NSN 5961-00-914-9740 Or (5961009149740) Part List

Item Name Semiconductor Device Diode
Federal Supply Group (FSG) Electrical and Electronic Equipment Components
Federal Supply Class (FSC) 5961 Semiconductor Devices and Associated Hardware
National Item Identification Number (NIIN) 00-914-9740 (009149740)
NCB Code USA (00)
Manufacturer Raytheon Company, Micro Uspd Inc, Leonardo Mw Ltd, Military Specifications, Selex Es Limited, Northrop Grumman Systems Corporation, Thales Nederland Bv, Airbus Defence And Space Limited, Rsm Electron Power Inc, Lockheed Martin Corporation, Electronic Industries Inc, Thales Optronics Limited, American Telephone And Telegraph Co, Joint Army-Navy Specifications, Woodward Inc, Texas Instruments Inc, Krupp Atlas Elektronik Gmbh, Rockwell Collins Aerospace, Eca Etablissement Central Des, Nimikkeistokeskus Ncb Finland, Adelco Elektronik Gmbh, Solitron Devices Inc, General Semiconductor Inc, Semtech Corporation, Freescale Semiconductor Inc, Inspektorat Wsparcia Sil Zbrojnych, General Electric Company, Meggitt International Ltd
Part Number Manufacturer Item Name RFQ
4178600-430 raytheon company semiconductor device diode RFQ
86-577US70A micro uspd inc semiconductor device diode RFQ
12448 37062 leonardo mw ltd semiconductor device diode RFQ
JAN1N4246 military specifications semiconductor device diode RFQ
US Q 19500-JAN1N4246 selex es limited semiconductor device diode RFQ
1885378 ITEM 8 northrop grumman systems corporation semiconductor device diode RFQ
S600-1002A thales nederland bv semiconductor device diode RFQ
5L5532-101-64 airbus defence and space limited semiconductor device diode RFQ
1N5060 rsm electron power inc semiconductor device diode RFQ
1884774 ITEM 6 northrop grumman systems corporation semiconductor device diode RFQ
MIL-PRF-19500/286 military specifications semiconductor device diode RFQ
3004967-01 lockheed martin corporation semiconductor device diode RFQ
JEDEC1N5060 electronic industries inc semiconductor device diode RFQ
S600-1002A thales optronics limited semiconductor device diode RFQ
40837 american telephone and telegraph co semiconductor device diode RFQ
JAN1N4246A joint army-navy specifications semiconductor device diode RFQ
1684-324 woodward inc semiconductor device diode RFQ
720602-18 raytheon company semiconductor device diode RFQ
1N4246 texas instruments inc semiconductor device diode RFQ
IN4246 military specifications semiconductor device diode RFQ
529-1983 krupp atlas elektronik gmbh semiconductor device diode RFQ
353-9009-060 rockwell collins aerospace semiconductor device diode RFQ
5961009149740 eca etablissement central des semiconductor device diode RFQ
408037 american telephone and telegraph co semiconductor device diode RFQ
IN5060 northrop grumman systems corporation semiconductor device diode RFQ
10392053 nimikkeistokeskus ncb finland semiconductor device diode RFQ
JAN1N4246A adelco elektronik gmbh semiconductor device diode RFQ
MIL-S-19500/286 military specifications semiconductor device diode RFQ
CER70C solitron devices inc semiconductor device diode RFQ
JAN4246 general semiconductor inc semiconductor device diode RFQ
JAN1N4246 joint army-navy specifications semiconductor device diode RFQ
1N4246 military specifications semiconductor device diode RFQ
1N4246 semtech corporation semiconductor device diode RFQ
SR1287-1 freescale semiconductor inc semiconductor device diode RFQ
JAN4246 military specifications semiconductor device diode RFQ
1N2483 texas instruments inc semiconductor device diode RFQ
5961PL0942000 inspektorat wsparcia sil zbrojnych semiconductor device diode RFQ
GE504A general electric company semiconductor device diode RFQ
JANIN4246 meggitt international ltd semiconductor device diode RFQ

Technical Characteristics of NSN 5961009149740

MRCCriteriaCharacteristic
ABHPOVERALL LENGTH0.250 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM
ADAVOVERALL DIAMETER0.150 INCHES MAXIMUM
AXGYMOUNTING METHODTERMINAL
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
MATTMATERIALGLASS INCLOSURE
MATTMATERIALSILICON SEMICONDUCTOR
TESTTEST DATA DOCUMENT81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
ZZZKSPECIFICATION/STANDARD DATA81349-MIL-S-19500/286 GOVERNMENT SPECIFICATION

Relevant Components for NSN - 5961-00-914-9740, 5961009149740
5998-01-628-9128 (5998016289128) 5950-00-556-2628 (5950005562628) 5910-00-502-7030 (5910005027030) 5930-01-200-1187 (5930012001187)
5930-00-436-0040 (5930004360040) 5998-01-022-6777 (5998010226777) 5999-01-229-2868 (5999012292868) 5930-00-451-8223 (5930004518223)
5980-01-237-3545 (5980012373545) 5955-00-463-6952 (5955004636952) 5975-01-438-5116 (5975014385116) 5998-01-391-1476 (5998013911476)

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