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| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-950-6588 (009506588) |
| NCB Code | USA (00) |
| Manufacturer | Kurz And Root Generator Company Llc, Ward Leonard Electric Company Inc, Military Specifications, Adelco Elektronik Gmbh, Joint Army-Navy Specifications, General Electric Company, Unisys Ltd, Solitron Devices Inc, Thales Nederland Bv, General Semiconductor Inc, Eca Etablissement Central Des, Joint Electron Device Engineering, Allis Chalmers Corp, Bogue Electric Manufacturing Co |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| A38-0010 | kurz and root generator company llc | semiconductor device diode | RFQ |
| J94-0150 | ward leonard electric company inc | semiconductor device diode | RFQ |
| JAN1N3996A | military specifications | semiconductor device diode | RFQ |
| JAN1N3996AA | adelco elektronik gmbh | semiconductor device diode | RFQ |
| MIL-PRF-19500/124 | military specifications | semiconductor device diode | RFQ |
| JAN1N3996A | joint army-navy specifications | semiconductor device diode | RFQ |
| 5491338P1 | general electric company | semiconductor device diode | RFQ |
| DRC81221 | unisys ltd | semiconductor device diode | RFQ |
| NS12006 | solitron devices inc | semiconductor device diode | RFQ |
| 3522 500 10129 | thales nederland bv | semiconductor device diode | RFQ |
| 1N3996 | general semiconductor inc | semiconductor device diode | RFQ |
| 5961009506588 | eca etablissement central des | semiconductor device diode | RFQ |
| 1N3996 | joint electron device engineering | semiconductor device diode | RFQ |
| VBE890-1N3996A | thales nederland bv | semiconductor device diode | RFQ |
| 00-875-121-289 | allis chalmers corp | semiconductor device diode | RFQ |
| C24386-2 | bogue electric manufacturing co | semiconductor device diode | RFQ |
| 1N3996A | military specifications | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.1 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0.49 AMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS CASE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| PRMT | PRECIOUS MATERIAL | GOLD OR SILVER |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 1 TAB,SOLDER LUG |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-950-6588, 5961009506588 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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