AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-975-2175 (009752175) |
| NCB Code | USA (00) |
| Manufacturer | General Electric Company, Rockwell Collins Aerospace, Military Specifications, Lockheed Martin Corporation, Eca Etablissement Central Des, Navair And Navsea Managed, Raytheon Company, Texas Instruments Inc, Svenska Philips Ab, Allen R C Instruments Inc, Interstate Electronics Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 5494922P3 | general electric company | semiconductor device diode | RFQ |
| 353-2576-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 1N458 | military specifications | semiconductor device diode | RFQ |
| 353-8020-030 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 9000439-01 | lockheed martin corporation | semiconductor device diode | RFQ |
| 5961009752175 | eca etablissement central des | semiconductor device diode | RFQ |
| 2318895P1 | navair and navsea managed | semiconductor device diode | RFQ |
| 322MS056P001 | raytheon company | semiconductor device diode | RFQ |
| 353-0205-000 | rockwell collins aerospace | semiconductor device diode | RFQ |
| JAN1N458 | military specifications | semiconductor device diode | RFQ |
| DL117 | texas instruments inc | semiconductor device diode | RFQ |
| RP491-75-1N458JAN | svenska philips ab | semiconductor device diode | RFQ |
| A147-04 | allen r c instruments inc | semiconductor device diode | RFQ |
| MIL-PRF-19500/193 | military specifications | semiconductor device diode | RFQ |
| 343-211-003 | interstate electronics corporation | semiconductor device diode | RFQ |
| 531553-1 | raytheon company | semiconductor device diode | RFQ |
| JAN1N458B | military specifications | semiconductor device diode | RFQ |
| MIL-S-19500/193 | military specifications | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM REVERSE VOLTAGE,PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 165.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC AND 55.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT,180 DEGREES CONDUCTION ANGLE,AVERAGE OVER A FULL 60-HZ CYCLE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS CASE |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/193 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-975-2175, 5961009752175 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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