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| Item Name | Semiconductor Device Set |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-019-4934 (010194934) |
| NCB Code | USA (01) |
| Manufacturer | Communications & Power Industries Llc, Aeroflex Limited, Skyworks Solutions Inc, Cobham Advanced Electronic Solutions Inc, Raytheon Company, Cpi International Inccommunications, Eaton Corporation, Crane Electronics Inc, Microsemi Corporation, Sdi Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 8C1014-4 | communications & power industries llc | semiconductor device set | RFQ |
| 20-00734-003 | aeroflex limited | semiconductor device set | RFQ |
| 20-00734-003 | skyworks solutions inc | semiconductor device set | RFQ |
| MA45616M3 | cobham advanced electronic solutions inc | semiconductor device set | RFQ |
| 20-00734-003 | raytheon company | semiconductor device set | RFQ |
| 8C1014-4 | cpi international inccommunications | semiconductor device set | RFQ |
| 20-00734-003 | cobham advanced electronic solutions inc | semiconductor device set | RFQ |
| 20-00734-003 | eaton corporation | semiconductor device set | RFQ |
| 20-00734-003 | crane electronics inc | semiconductor device set | RFQ |
| GC16032-36 | microsemi corporation | semiconductor device set | RFQ |
| 20-00734-003 | sdi inc | semiconductor device set | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | CERAMIC ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.975 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| ABKW | OVERALL HEIGHT | 0.105 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ABMK | OVERALL WIDTH | 0.127 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE VARIABLE CAPACITOR |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MINIMUM BREAKDOWN VOLTAGE,DC ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| CTRG | CAPACITANCE RATING IN PICOFARADS | 6.0 MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 6.7 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 95.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| PMLC | PRECIOUS MATERIAL AND LOCATION | LEADS PLATED GOLD |
| TEST | TEST DATA DOCUMENT | 00724-20-00734 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 RIBBON ALL SEMICONDUCTOR DEVICE DIODE |
| Relevant Components for NSN - 5961-01-019-4934, 5961010194934 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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