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Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-088-8346 (010888346) |
NCB Code | USA (01) |
Manufacturer | Microsemi Corporation, Raytheon Company, Freescale Semiconductor Inc, Joint Army-Navy Specifications, Military Specifications, Hamilton Sundstrand Corporation, Solitron Devices Inc, Telcom Semiconductor Inc, Fairchild Semiconductor Corp, Micro Uspd Inc, Espey Mfg And Electronics Corp, Raytheon Technical Services Company, Electronic Industries Inc, Texas Instruments Inc, International Diode Corp, E And R Electronics Inc, Interstate Electronics Corporation, Infineon Technologies, Champion Aviation Inc, Gilbert Engineering Co Inc, General Semiconductor Inc, Semitronics Corp, Bae Systems Inc, Lockheed Martin Corporation, Power Mate Co, Astronics Test Systems Inc |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
MIS-19836 64 | microsemi corporation | semiconductor device diode | RFQ |
619136-1 | raytheon company | semiconductor device diode | RFQ |
1N757D | freescale semiconductor inc | semiconductor device diode | RFQ |
JANTX1N757A1 | joint army-navy specifications | semiconductor device diode | RFQ |
JAN1N757A | military specifications | semiconductor device diode | RFQ |
5E4820 51-1015 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
MIL-PRF-19500/127 | military specifications | semiconductor device diode | RFQ |
418715-63 | raytheon company | semiconductor device diode | RFQ |
1N960B | solitron devices inc | semiconductor device diode | RFQ |
CD32123 | telcom semiconductor inc | semiconductor device diode | RFQ |
1N960B | fairchild semiconductor corp | semiconductor device diode | RFQ |
MIL-S-19500/127 | military specifications | semiconductor device diode | RFQ |
1N960B | micro uspd inc | semiconductor device diode | RFQ |
1N960B | espey mfg and electronics corp | semiconductor device diode | RFQ |
566573 | raytheon technical services company | semiconductor device diode | RFQ |
1N960B | electronic industries inc | semiconductor device diode | RFQ |
E-233 | texas instruments inc | semiconductor device diode | RFQ |
1N960B | international diode corp | semiconductor device diode | RFQ |
2601-3100 | e and r electronics inc | semiconductor device diode | RFQ |
RELEASE2959 | electronic industries inc | semiconductor device diode | RFQ |
1N757A | electronic industries inc | semiconductor device diode | RFQ |
1N960B | texas instruments inc | semiconductor device diode | RFQ |
1N960B | interstate electronics corporation | semiconductor device diode | RFQ |
1N960A | infineon technologies | semiconductor device diode | RFQ |
1N960B | champion aviation inc | semiconductor device diode | RFQ |
1N960B | gilbert engineering co inc | semiconductor device diode | RFQ |
JAN1N757A-1 | military specifications | semiconductor device diode | RFQ |
JANTX1N757A | joint army-navy specifications | semiconductor device diode | RFQ |
1N960B | general semiconductor inc | semiconductor device diode | RFQ |
1N960B | semitronics corp | semiconductor device diode | RFQ |
200441-126 | bae systems inc | semiconductor device diode | RFQ |
JANTX1N757A-1 | military specifications | semiconductor device diode | RFQ |
1N960 | military specifications | semiconductor device diode | RFQ |
1N960B | microsemi corporation | semiconductor device diode | RFQ |
4907923-14 | lockheed martin corporation | semiconductor device diode | RFQ |
DR017000 | power mate co | semiconductor device diode | RFQ |
220034 | astronics test systems inc | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.1 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
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5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
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