AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-088-8346 (010888346) |
| NCB Code | USA (01) |
| Manufacturer | Texas Instruments Inc, Champion Aviation Inc, Power Mate Co, Joint Army-Navy Specifications, Bae Systems Inc, Raytheon Company, Electronic Industries Inc, General Semiconductor Inc, Telcom Semiconductor Inc, Microsemi Corporation, Military Specifications, Fairchild Semiconductor Corp, Gilbert Engineering Co Inc, Solitron Devices Inc, Semitronics Corp, Infineon Technologies, Raytheon Technical Services Company, Freescale Semiconductor Inc, International Diode Corp, Hamilton Sundstrand Corporation, Interstate Electronics Corporation, Micro Uspd Inc, Espey Mfg And Electronics Corp, E And R Electronics Inc, Astronics Test Systems Inc, Lockheed Martin Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1N960B | texas instruments inc | semiconductor device diode | RFQ |
| 1N960B | champion aviation inc | semiconductor device diode | RFQ |
| DR017000 | power mate co | semiconductor device diode | RFQ |
| JANTX1N757A1 | joint army-navy specifications | semiconductor device diode | RFQ |
| 200441-126 | bae systems inc | semiconductor device diode | RFQ |
| 418715-63 | raytheon company | semiconductor device diode | RFQ |
| RELEASE2959 | electronic industries inc | semiconductor device diode | RFQ |
| 1N960B | general semiconductor inc | semiconductor device diode | RFQ |
| CD32123 | telcom semiconductor inc | semiconductor device diode | RFQ |
| MIS-19836 64 | microsemi corporation | semiconductor device diode | RFQ |
| JAN1N757A | military specifications | semiconductor device diode | RFQ |
| 1N960B | fairchild semiconductor corp | semiconductor device diode | RFQ |
| 1N757A | electronic industries inc | semiconductor device diode | RFQ |
| JAN1N757A-1 | military specifications | semiconductor device diode | RFQ |
| 1N960B | gilbert engineering co inc | semiconductor device diode | RFQ |
| JANTX1N757A-1 | military specifications | semiconductor device diode | RFQ |
| 1N960B | solitron devices inc | semiconductor device diode | RFQ |
| E-233 | texas instruments inc | semiconductor device diode | RFQ |
| 1N960 | military specifications | semiconductor device diode | RFQ |
| MIL-S-19500/127 | military specifications | semiconductor device diode | RFQ |
| MIL-PRF-19500/127 | military specifications | semiconductor device diode | RFQ |
| 1N960B | semitronics corp | semiconductor device diode | RFQ |
| 1N960A | infineon technologies | semiconductor device diode | RFQ |
| 566573 | raytheon technical services company | semiconductor device diode | RFQ |
| 1N960B | microsemi corporation | semiconductor device diode | RFQ |
| 619136-1 | raytheon company | semiconductor device diode | RFQ |
| 1N757D | freescale semiconductor inc | semiconductor device diode | RFQ |
| 1N960B | international diode corp | semiconductor device diode | RFQ |
| 5E4820 51-1015 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
| 1N960B | interstate electronics corporation | semiconductor device diode | RFQ |
| 1N960B | micro uspd inc | semiconductor device diode | RFQ |
| 1N960B | espey mfg and electronics corp | semiconductor device diode | RFQ |
| 1N960B | electronic industries inc | semiconductor device diode | RFQ |
| JANTX1N757A | joint army-navy specifications | semiconductor device diode | RFQ |
| 2601-3100 | e and r electronics inc | semiconductor device diode | RFQ |
| 220034 | astronics test systems inc | semiconductor device diode | RFQ |
| 4907923-14 | lockheed martin corporation | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.1 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-088-8346, 5961010888346 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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