AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-105-0607 (011050607) |
| NCB Code | USA (01) |
| Manufacturer | Honeywell International Inc, Syntegra Usa Inc, Lockheed Martin Corporation, Nimikkeistokeskus Ncb Finland, Efratom Time And Frequency Products Inc, Cohu Inc, Freescale Semiconductor Inc, L 3 Communications Corporation, Military Specifications, Raytheon Company, Aero Systems Engineering Inc, Microsemi Corporation, Trw Electronic Components, Williams Hydraulic Service, Electronic Industries Inc, Magnetic Peripherals Inc, Hamilton Sundstrand Corporation, Rockwell Collins Aerospace, Northrop Grumman Systems Corporation, Hewlett-Packard Company, Inspektorat Wsparcia Sil Zbrojnych, General Dynamics Information Systems, Dla Land And Maritime, Eldec Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 1534864-32 | honeywell international inc | semiconductor device diode | RFQ |
| 50240105-2 | syntegra usa inc | semiconductor device diode | RFQ |
| 4907923-07 | lockheed martin corporation | semiconductor device diode | RFQ |
| 10133209 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
| 100964-001 | efratom time and frequency products inc | semiconductor device diode | RFQ |
| 3510036-048 | cohu inc | semiconductor device diode | RFQ |
| 1N5230 | freescale semiconductor inc | semiconductor device diode | RFQ |
| 452303 | l 3 communications corporation | semiconductor device diode | RFQ |
| JANTX1N750A-1 | military specifications | semiconductor device diode | RFQ |
| 531477-5 | raytheon company | semiconductor device diode | RFQ |
| MIL-PRF-19500/127 | military specifications | semiconductor device diode | RFQ |
| 100435-008 | aero systems engineering inc | semiconductor device diode | RFQ |
| 1N750A | microsemi corporation | semiconductor device diode | RFQ |
| 1N6083D | trw electronic components | semiconductor device diode | RFQ |
| 1N5230A | williams hydraulic service | semiconductor device diode | RFQ |
| 1N6083D | electronic industries inc | semiconductor device diode | RFQ |
| 50240105-2 | magnetic peripherals inc | semiconductor device diode | RFQ |
| JANTX1N750A | military specifications | semiconductor device diode | RFQ |
| 5E4820-51-1008 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
| 995-9502-024 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 356888-1 | raytheon company | semiconductor device diode | RFQ |
| 353-8503-250 | rockwell collins aerospace | semiconductor device diode | RFQ |
| 019-003502 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| 1902-3085 | hewlett-packard company | semiconductor device diode | RFQ |
| 70943102002 | raytheon company | semiconductor device diode | RFQ |
| 5961PL1397489 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | RFQ |
| 50240105 | general dynamics information systems | semiconductor device diode | RFQ |
| RELEASE6606 | electronic industries inc | semiconductor device diode | RFQ |
| L00962 | dla land and maritime | semiconductor device diode | RFQ |
| CR122-22 | eldec corporation | semiconductor device diode | RFQ |
| AN1N750A | military specifications | semiconductor device diode | RFQ |
| 1N750A | freescale semiconductor inc | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.7 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 85.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-105-0607, 5961011050607 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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