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| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-132-0039 (011320039) |
| NCB Code | USA (01) |
| Manufacturer | Military Specifications, Datron The Instruments Inc, Navair And Navsea Managed, Texas Instruments Inc, Lockheed Martin Corporation, Joint Army-Navy Specifications, Nimikkeistokeskus Ncb Finland, Bae Systems Inc, L 3 Communications Corporation, Rockwell Collins Aerospace, Northrop Grumman Systems Corporation |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| JANTX1N749A | military specifications | semiconductor device diode | RFQ |
| 374-00044 | datron the instruments inc | semiconductor device diode | RFQ |
| 1820838-4 | navair and navsea managed | semiconductor device diode | RFQ |
| 1N749ASPL | texas instruments inc | semiconductor device diode | RFQ |
| MIL-S-19500/127 | military specifications | semiconductor device diode | RFQ |
| 7900258-06 | lockheed martin corporation | semiconductor device diode | RFQ |
| TX1N759A-1 | military specifications | semiconductor device diode | RFQ |
| JANTX1N749A | joint army-navy specifications | semiconductor device diode | RFQ |
| JANTX1N749A-1 | military specifications | semiconductor device diode | RFQ |
| 10133297 | nimikkeistokeskus ncb finland | semiconductor device diode | RFQ |
| 200441-118 | bae systems inc | semiconductor device diode | RFQ |
| 650C6 | texas instruments inc | semiconductor device diode | RFQ |
| JANTX749A-1 | military specifications | semiconductor device diode | RFQ |
| HZ8832 | l 3 communications corporation | semiconductor device diode | RFQ |
| JAN1N749A1 | military specifications | semiconductor device diode | RFQ |
| 995-9502-023 | rockwell collins aerospace | semiconductor device diode | RFQ |
| MIL-PRF-19500/127 | military specifications | semiconductor device diode | RFQ |
| 019-003872-060 | northrop grumman systems corporation | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.3 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 90.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-132-0039, 5961011320039 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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