Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 01-210-1785 (012101785) |
NCB Code | USA (01) |
Manufacturer | International Rectifier Corporation, Sundstrand International Corporation, Telcom Semiconductor Inc, N A P Smd Technology Inc, Hamilton Sundstrand Corporation, Freescale Semiconductor Inc, Semicon Components Inc, Microsemi Corporation |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
69-7404 | international rectifier corporation | semiconductor device diode | RFQ |
938D392-16 | sundstrand international corporation | semiconductor device diode | RFQ |
CD32473 | telcom semiconductor inc | semiconductor device diode | RFQ |
G4336 | n a p smd technology inc | semiconductor device diode | RFQ |
938D392-16 | hamilton sundstrand corporation | semiconductor device diode | RFQ |
195-16 | freescale semiconductor inc | semiconductor device diode | RFQ |
69-7404 | semicon components inc | semiconductor device diode | RFQ |
DZ-1390 | microsemi corporation | semiconductor device diode | RFQ |
DZ721214R | microsemi corporation | semiconductor device diode | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.140 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 47.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 0.05 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 8.50 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
FEAT | SPECIAL FEATURES | HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
TEST | TEST DATA DOCUMENT | 00167-938D392 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
Relevant Components for NSN - 5961-01-210-1785, 5961012101785 | ||||
5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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