AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-267-5811 (012675811) |
| NCB Code | USA (01) |
| Manufacturer | Raytheon Company, Frequency Electronics Inc, Fei Microwave Inc, Crane Electronics Inc |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.400 INCHES MAXIMUM |
| ABKW | OVERALL HEIGHT | 0.095 INCHES NOMINAL |
| ABMK | OVERALL WIDTH | 0.284 INCHES NOMINAL |
| AFZC | FUNCTION FOR WHICH DESIGNED | DETECTOR AND TUNNEL DIODE |
| AXGY | MOUNTING METHOD | PRESS FIT |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM FORWARD VOLTAGE,DC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 RIBBON |
| Relevant Components for NSN - 5961-01-267-5811, 5961012675811 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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