AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-351-8135 (013518135) |
| NCB Code | USA (01) |
| Manufacturer | Graphtec America Inc, Nisshinbo Micro Devices Inc, New Japan Radio Co Ltd |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 503100005 | graphtec america inc | semiconductor device diode | RFQ |
| WZ-065 | nisshinbo micro devices inc | semiconductor device diode | RFQ |
| 1503100005-00 | graphtec america inc | semiconductor device diode | RFQ |
| WZ-065 | new japan radio co ltd | semiconductor device diode | RFQ |
| 64802-003 | graphtec america inc | semiconductor device diode | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.5 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTRD | POWER RATING PER CHARACTERISTIC | 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| Relevant Components for NSN - 5961-01-351-8135, 5961013518135 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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