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| Item Name | Transistor |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-641-5820 (016415820) |
| NCB Code | USA (01) |
| Manufacturer | Microsemi Corporation |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTRD | Power Rating Per Characteristic | 583.0 WATTS NOMINAL TOTAL POWER DISSIPATION |
| FEAT | Special Features | DESIGNED FOR HIGH POWER PULSE IFF, DME, AND TACAN; APPLICATIONS; 200 W (TYP.) IFF 1030 - 1090 MHZ; 150 W (MIN.) DME 1025 - 1150 MHZ; 140 W (TYP.) TACAN 960 - 1215 MHZ; 8.2 DB GAIN; REFRACTORY GOLD METALLIZATION; BALLASTING ANDLOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS; 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS; |
| CXCY | Part Name Assigned By Controlling Agency | RF AND MICROWAVE TRANSISTOR |
| CTMZ | Semiconductor Material | SILICON ALLOY |
| ABBH | Inclosure Material | CERAMIC AND METAL |
| CTQX | Current Rating Per Characteristic | 10.0 MILLIAMPERES MAXIMUM EMITTER CURRENT, INSTANTANEOUS |
| ABHP | Overall Length | 0.895 INCHES MINIMUM AND 0.906 INCHES MAXIMUM |
| MRC | Decoded Requirement | Clear Text Reply |
| Relevant Components for NSN - 5961-01-641-5820, 5961016415820 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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