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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 00-131-8007 (001318007) |
| NCB Code | USA (00) |
| Manufacturer | Intersil Corporation, Harris Corporation, Raytheon E Systems Inc, Intersil Communications Inc, Dla Land And Maritime, Texas Instruments Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 3300-44028-1 | intersil corporation | microcircuit memory | RFQ |
| RM1-0186-5 | harris corporation | microcircuit memory | RFQ |
| 3300-44028-1 | raytheon e systems inc | microcircuit memory | RFQ |
| RM1-0186-5 | intersil communications inc | microcircuit memory | RFQ |
| RM1-0186-5 | intersil corporation | microcircuit memory | RFQ |
| ROM PROM FAMILY 055 | dla land and maritime | microcircuit memory | RFQ |
| HM1-0186-5 | intersil corporation | microcircuit memory | RFQ |
| DM108-1 | texas instruments inc | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 450.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 00.0/70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | CURRENT-MODE LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 3.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | DIODE MATRIX |
| TEST | TEST DATA DOCUMENT | 15770-3300-44028 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D |
| TTQY | TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-00-131-8007, 5962001318007 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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