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If you are in the market for NSN 5962-01-093-6160 supplies that are routinely offered with affordable pricing and prompt delivery, turn to AI NSN Parts. On this page, you will find popular part numbers like DM77S191J 883B, ROM PROM HEAD 029, R29681SMB, 5962-3821002BJB, 99116292, and others that are available for procurement at any time. Be sure to browse our NSN 5962-01-093-6160 inventory as you see fit, and if you come across any item that grabs your attention, click on the “RFQ” button situated alongside it to access our online quote request service. Within 15 minutes of receiving your RFQ submission, one of our experts will supply you with a customized response that matches your specifications.
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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-093-6160 (010936160) |
| NCB Code | USA (01) |
| Manufacturer | National Semiconductor Corporation, Dla Land And Maritime, Fairchild Semiconductor Corp, Military Specifications, Thales Sa, Intel Corporation, Boeing Company The, Philips Semiconductors Ltd, Hamilton Sundstrand Corporation, International Electric Co, Lockheed Martin Corporation, Advanced Micro Devices Inc, Raytheon Company |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| DM77S191J 883B | national semiconductor corporation | microcircuit memory | RFQ |
| ROM PROM HEAD 029 | dla land and maritime | microcircuit memory | RFQ |
| R29681SMB | fairchild semiconductor corp | microcircuit memory | RFQ |
| 5962-3821002BJB | military specifications | microcircuit memory | RFQ |
| 99116292 | thales sa | microcircuit memory | RFQ |
| M3636B-1 | intel corporation | microcircuit memory | RFQ |
| 477-1690-001 | boeing company the | microcircuit memory | RFQ |
| 82S191 | philips semiconductors ltd | microcircuit memory | RFQ |
| JM38510/21002BJX | military specifications | microcircuit memory | RFQ |
| 5E8971 344-0014 | hamilton sundstrand corporation | microcircuit memory | RFQ |
| 3636B-1 | intel corporation | microcircuit memory | RFQ |
| M38510/21002BJB | military specifications | microcircuit memory | RFQ |
| MD3636 | international electric co | microcircuit memory | RFQ |
| MIL-M-38510/210 | military specifications | microcircuit memory | RFQ |
| M38510/21002BJA | military specifications | microcircuit memory | RFQ |
| M38510/21002BJX | military specifications | microcircuit memory | RFQ |
| S82S191I 883B | philips semiconductors ltd | microcircuit memory | RFQ |
| 7907566-02 | lockheed martin corporation | microcircuit memory | RFQ |
| AM27S291ADC | advanced micro devices inc | microcircuit memory | RFQ |
| AM27S191DCB | advanced micro devices inc | microcircuit memory | RFQ |
| 5962-3821002BJX | military specifications | microcircuit memory | RFQ |
| 7909151-06 | lockheed martin corporation | microcircuit memory | RFQ |
| 7908628-06 | lockheed martin corporation | microcircuit memory | RFQ |
| 5962-3821002BJA | military specifications | microcircuit memory | RFQ |
| R29683ASMB | fairchild semiconductor corp | microcircuit memory | RFQ |
| R29681ASMB | fairchild semiconductor corp | microcircuit memory | RFQ |
| 000-8003-983 | boeing company the | microcircuit memory | RFQ |
| N82S191N | philips semiconductors ltd | microcircuit memory | RFQ |
| D3636B1 | intel corporation | microcircuit memory | RFQ |
| AM27S191APC | advanced micro devices inc | microcircuit memory | RFQ |
| G134663-2 | raytheon company | microcircuit memory | RFQ |
| HM1-76161-5 | advanced micro devices inc | microcircuit memory | RFQ |
| JAN-M38510/21002BJX | military specifications | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND SCHOTTKY AND W/BUFFERED OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/21 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-093-6160, 5962010936160 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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