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Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-097-7502 (010977502) |
NCB Code | USA (01) |
Manufacturer | Aydin Corp, Drs Icas Llc, Dla Land And Maritime, Intersil Corporation, Philips Semiconductors Ltd, Military Specifications, Mmi Amd, Raytheon Company |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
139-341-005 | aydin corp | microcircuit memory | RFQ |
93125 | drs icas llc | microcircuit memory | RFQ |
ROM PROM HEAD 022 | dla land and maritime | microcircuit memory | RFQ |
HPR0M8256 | intersil corporation | microcircuit memory | RFQ |
82S23 | philips semiconductors ltd | microcircuit memory | RFQ |
82S23 | aydin corp | microcircuit memory | RFQ |
M38519/20701BEX | military specifications | microcircuit memory | RFQ |
SMC750125 | drs icas llc | microcircuit memory | RFQ |
MM5330J | mmi amd | microcircuit memory | RFQ |
54S288 | raytheon company | microcircuit memory | RFQ |
M38510/20701BEB | military specifications | microcircuit memory | RFQ |
MIL-M-38510/207 | military specifications | microcircuit memory | RFQ |
M38510/20701BEA | military specifications | microcircuit memory | RFQ |
ROM PROM HEAD 003 | dla land and maritime | microcircuit memory | RFQ |
HM1-8256-8 | intersil corporation | microcircuit memory | RFQ |
HPROM1-8256-8 | intersil corporation | microcircuit memory | RFQ |
MM6330J | mmi amd | microcircuit memory | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND W/OPEN COLLECTOR AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE AND BIPOLAR AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/207/USAF/ GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5962-01-097-7502, 5962010977502 | ||||
5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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