AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-102-3846 (011023846) |
| NCB Code | USA (01) |
| Manufacturer | Philips Semiconductors Ltd, National Semiconductor Corporation, Raytheon Technical Services Company, Military Specifications, Fairchild Semiconductor Corp, Mmi Amd, Lansdale Semiconductor Inc, Advanced Micro Devices Inc, Northrop Grumman Systems Corporation, General Dynamics Information Systems, Boeing Company The, E2v Inc, Intersil Corporation, Dla Land And Maritime, Raven Electronics Corporation, Lockheed Martin Corporation, Intel Corporation, Bae Systems Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| S82S141I 883B | philips semiconductors ltd | microcircuit memory | RFQ |
| DM54S474J | national semiconductor corporation | microcircuit memory | RFQ |
| 4004785-01 | raytheon technical services company | microcircuit memory | RFQ |
| JM38510/20802BJX | military specifications | microcircuit memory | RFQ |
| 583R350H01 | fairchild semiconductor corp | microcircuit memory | RFQ |
| 6341-1J | mmi amd | microcircuit memory | RFQ |
| SL82S141 BJA | lansdale semiconductor inc | microcircuit memory | RFQ |
| 1004487-01 | raytheon technical services company | microcircuit memory | RFQ |
| AMD9214DM | advanced micro devices inc | microcircuit memory | RFQ |
| N82S141F | philips semiconductors ltd | microcircuit memory | RFQ |
| 583R350H01 | northrop grumman systems corporation | microcircuit memory | RFQ |
| MIL-M-38510/208 | military specifications | microcircuit memory | RFQ |
| 5962-3820802BJB | military specifications | microcircuit memory | RFQ |
| M38510/20802BJB | military specifications | microcircuit memory | RFQ |
| 5962-3820802BJA | military specifications | microcircuit memory | RFQ |
| 85694600-03 | general dynamics information systems | microcircuit memory | RFQ |
| 4004785-08 | raytheon technical services company | microcircuit memory | RFQ |
| 477-1768-003 | boeing company the | microcircuit memory | RFQ |
| DM54S474J MIL | national semiconductor corporation | microcircuit memory | RFQ |
| 5962-3820802BJX | military specifications | microcircuit memory | RFQ |
| 82S141 BJA | e2v inc | microcircuit memory | RFQ |
| IM5625-CJG | intersil corporation | microcircuit memory | RFQ |
| ROM PROM HEAD 026 | dla land and maritime | microcircuit memory | RFQ |
| M38510/20802BJA | military specifications | microcircuit memory | RFQ |
| H201-3624-04 | raven electronics corporation | microcircuit memory | RFQ |
| M38510/20802BJ | military specifications | microcircuit memory | RFQ |
| 7849878P001 | lockheed martin corporation | microcircuit memory | RFQ |
| D3624 | intel corporation | microcircuit memory | RFQ |
| 9402-00129 | bae systems inc | microcircuit memory | RFQ |
| HM1-7641-5 | intersil corporation | microcircuit memory | RFQ |
| 477-1336-031 | boeing company the | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND SCHOTTKY AND BIPOLAR AND PROGRAMMABLE AND POSITIVE OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/208/USAF/ GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-102-3846, 5962011023846 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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