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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-155-5679 (011555679) |
| NCB Code | USA (01) |
| Manufacturer | Edo Corporation, Philips Semiconductors Ltd, Intersil Corporation, Rockwell Collins Aerospace, Northrop Grumman Systems Corporation, Military Specifications, Mmi Amd, Dla Land And Maritime |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 507624-255 | edo corporation | microcircuit memory | RFQ |
| S82S185I | philips semiconductors ltd | microcircuit memory | RFQ |
| CC5145 | philips semiconductors ltd | microcircuit memory | RFQ |
| B2672 | intersil corporation | microcircuit memory | RFQ |
| PC73618-1 | rockwell collins aerospace | microcircuit memory | RFQ |
| 48-068363-01 | northrop grumman systems corporation | microcircuit memory | RFQ |
| 48-068363-02 | northrop grumman systems corporation | microcircuit memory | RFQ |
| M38510/20902BVB | military specifications | microcircuit memory | RFQ |
| M38510/20902BVA | military specifications | microcircuit memory | RFQ |
| MIL-M-38510/209 | military specifications | microcircuit memory | RFQ |
| SSM1215 | mmi amd | microcircuit memory | RFQ |
| HM1-7685-8 | intersil corporation | microcircuit memory | RFQ |
| ROM PROM HEAD 007 | dla land and maritime | microcircuit memory | RFQ |
| 82S185F | philips semiconductors ltd | microcircuit memory | RFQ |
| 53S841 | mmi amd | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 715.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-155-5679, 5962011555679 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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