AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-177-5400 (011775400) |
| NCB Code | USA (01) |
| Manufacturer | Integrated Device Technology Inc, Thales Uk Ltd, Rockwell Collins Aerospace, Hewlett-Packard Company, Raytheon E Systems Inc, Nice Cti Systems Uk Ltd, Raytheon Company |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| IDT6116LA120DB | integrated device technology inc | microcircuit memory | RFQ |
| 28734-1600-0001 | thales uk ltd | microcircuit memory | RFQ |
| 42550-0000-0228 | thales uk ltd | microcircuit memory | RFQ |
| 31 215-009 | rockwell collins aerospace | microcircuit memory | RFQ |
| IDT6116L1120DB | integrated device technology inc | microcircuit memory | RFQ |
| 1818-1768 | hewlett-packard company | microcircuit memory | RFQ |
| MC-E0024-001 | raytheon e systems inc | microcircuit memory | RFQ |
| CAT19613 | nice cti systems uk ltd | microcircuit memory | RFQ |
| IDT6116L-120-DB | integrated device technology inc | microcircuit memory | RFQ |
| 4056546-0701 | raytheon company | microcircuit memory | RFQ |
| G228875-1 | raytheon company | microcircuit memory | RFQ |
| IDT6116L150CB | integrated device technology inc | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | AN/GPN-22(V) RADAR DATA TRANSFER,SUBSYSTEM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION AND W/ENABLE AND BIDIRECTIONAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-177-5400, 5962011775400 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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