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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-181-3107 (011813107) |
| NCB Code | USA (01) |
| Manufacturer | Advanced Micro Devices Inc, Mmi Amd, National Semiconductor Corporation, Northrop Grumman Systems Corporation, Dla Land And Maritime, Military Specifications, Lockheed Martin Corporation, Honeywell International Inc, Rockwell Collins Aerospace |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| PAL12L6 | advanced micro devices inc | microcircuit memory | RFQ |
| PAL12L6 | mmi amd | microcircuit memory | RFQ |
| DMPAL12L6J 883 | national semiconductor corporation | microcircuit memory | RFQ |
| 644A649H01 | northrop grumman systems corporation | microcircuit memory | RFQ |
| ROM PROM HEAD 103 | dla land and maritime | microcircuit memory | RFQ |
| 5962-3850307BRX | military specifications | microcircuit memory | RFQ |
| M38510/50307BRB | military specifications | microcircuit memory | RFQ |
| M38510/50307BRA | military specifications | microcircuit memory | RFQ |
| MIL-M-38510/503 | military specifications | microcircuit memory | RFQ |
| 7909914-12 | lockheed martin corporation | microcircuit memory | RFQ |
| 5962-3850307BRA | military specifications | microcircuit memory | RFQ |
| 6405548-1 | honeywell international inc | microcircuit memory | RFQ |
| ROM/PROM HEAD 104 | dla land and maritime | microcircuit memory | RFQ |
| 351-3656-092 | rockwell collins aerospace | microcircuit memory | RFQ |
| 5962-3850307BRB | military specifications | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES REVERSE CURRENT,DC NOMINAL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PAL |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/503 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-181-3107, 5962011813107 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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