AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-197-8703 (011978703) |
| NCB Code | USA (01) |
| Manufacturer | Bae Systems Inc, Advanced Micro Devices Inc, Synertek, Lockheed Martin Corporation, Cypress Semiconductor Inc, Drs Sustainment Systems Inc, Raytheon Company, Inspektorat Wsparcia Sil Zbrojnych |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| 312234-003 | bae systems inc | microcircuit memory | RFQ |
| AM2148 55 BVA | advanced micro devices inc | microcircuit memory | RFQ |
| AM2148-45DM-B | advanced micro devices inc | microcircuit memory | RFQ |
| SYMC2148H-2 | synertek | microcircuit memory | RFQ |
| 7908419-05 | lockheed martin corporation | microcircuit memory | RFQ |
| CY2148-55DMB | cypress semiconductor inc | microcircuit memory | RFQ |
| ES5455-02 | drs sustainment systems inc | microcircuit memory | RFQ |
| G303488-103 | raytheon company | microcircuit memory | RFQ |
| CY2148-55DBM | cypress semiconductor inc | microcircuit memory | RFQ |
| 5962PL0930421 | inspektorat wsparcia sil zbrojnych | microcircuit memory | RFQ |
| AM2148-45 BVA | advanced micro devices inc | microcircuit memory | RFQ |
| G111397-1 | raytheon company | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1200.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND HERMETICALLY SEALED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -3.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | BIT QUANTITY 4096; WORD QUANTITY 1024 |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-197-8703, 5962011978703 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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