AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-260-8680 (012608680) |
| NCB Code | USA (01) |
| Manufacturer | Performance Semiconductor Corp, Dla Land And Maritime, Nimikkeistokeskus Ncb Finland, Integrated Device Technology Inc, Raytheon Company, Thales Sa, Matra Harris Semiconductor |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| P4C164-55DWMB | performance semiconductor corp | microcircuit memory | RFQ |
| 5962-8552505XX | dla land and maritime | microcircuit memory | RFQ |
| 415-2454 | nimikkeistokeskus ncb finland | microcircuit memory | RFQ |
| 8552505XA | dla land and maritime | microcircuit memory | RFQ |
| 5962-85525 | dla land and maritime | microcircuit memory | RFQ |
| IDT7164L55DB | integrated device technology inc | microcircuit memory | RFQ |
| 72-01398-097 | raytheon company | microcircuit memory | RFQ |
| 5962-3829409MXA | dla land and maritime | microcircuit memory | RFQ |
| IDT7164S55DB | integrated device technology inc | microcircuit memory | RFQ |
| 5962-38294 | dla land and maritime | microcircuit memory | RFQ |
| 5962-3829409MXB | dla land and maritime | microcircuit memory | RFQ |
| 5962-3829409MXX | dla land and maritime | microcircuit memory | RFQ |
| 99165736 | thales sa | microcircuit memory | RFQ |
| HM1E-65764N 883 | matra harris semiconductor | microcircuit memory | RFQ |
| 5962-8552505XA | dla land and maritime | microcircuit memory | RFQ |
| 5962-8552505XB | dla land and maritime | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.232 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 MILLIAMPERES MAXIMUM SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -3.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-260-8680, 5962012608680 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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