AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-280-5488 (012805488) |
| NCB Code | USA (01) |
| Manufacturer | Military Specifications, Intersil Corporation, Fujitsu America Inc, Eldec Corporation, Marconi Electronics Inc, Integrated Device Technology Inc, Honeywell International Inc, Lockheed Martin Corporation, Kearfott Corporation, Rca Ltd, Anritsu America Inc, Boeing Company The |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| JM38510/29104BJB | military specifications | microcircuit memory | RFQ |
| HM1-65162-8 | intersil corporation | microcircuit memory | RFQ |
| MB8416 | fujitsu america inc | microcircuit memory | RFQ |
| UM19-02 | eldec corporation | microcircuit memory | RFQ |
| JM38510/29104BJA | military specifications | microcircuit memory | RFQ |
| M.28469-30 | marconi electronics inc | microcircuit memory | RFQ |
| M38510/29104BJB | military specifications | microcircuit memory | RFQ |
| 5962-3829104BJX | military specifications | microcircuit memory | RFQ |
| IDT6116SA90DB | integrated device technology inc | microcircuit memory | RFQ |
| HM1-65162-5 | intersil corporation | microcircuit memory | RFQ |
| 8516085-604 | honeywell international inc | microcircuit memory | RFQ |
| 7546480P0001 | lockheed martin corporation | microcircuit memory | RFQ |
| 2808536-6 | honeywell international inc | microcircuit memory | RFQ |
| 61165 | intersil corporation | microcircuit memory | RFQ |
| A584A344-329 | kearfott corporation | microcircuit memory | RFQ |
| MIL-M-38510/291 | military specifications | microcircuit memory | RFQ |
| 6116AE2 | rca ltd | microcircuit memory | RFQ |
| IDT6116SA120DB | integrated device technology inc | microcircuit memory | RFQ |
| JM38510/29104BJX | military specifications | microcircuit memory | RFQ |
| HM1-6116-2 | intersil corporation | microcircuit memory | RFQ |
| IDT6116S90CB | integrated device technology inc | microcircuit memory | RFQ |
| UM19-02 | intersil corporation | microcircuit memory | RFQ |
| IDT6116S-90DB | integrated device technology inc | microcircuit memory | RFQ |
| HM6116P | anritsu america inc | microcircuit memory | RFQ |
| 6116S-90DB | integrated device technology inc | microcircuit memory | RFQ |
| B77T0543-0143 | boeing company the | microcircuit memory | RFQ |
| 5962-3829104BJB | military specifications | microcircuit memory | RFQ |
| 5962-3829104BJA | military specifications | microcircuit memory | RFQ |
| 7546480P1 | lockheed martin corporation | microcircuit memory | RFQ |
| M38510/29104BJA | military specifications | microcircuit memory | RFQ |
| 6116SA-90DB | integrated device technology inc | microcircuit memory | RFQ |
| M38510/29104BJX | military specifications | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | TRANSMITTER,COUNTERMEASURES TRAINGING SIGNAL AN/MLQ-T4 |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 70.00 MILLIAMPERES REVERSE CURRENT,DC ABSOLUTE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/291 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-280-5488, 5962012805488 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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