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Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-288-6901 (012886901) |
NCB Code | USA (01) |
Manufacturer | Philips Semiconductors Ltd, Raytheon Company, Military Specifications, Northrop Grumman Systems Corporation, Intersil Corporation, Texas Instruments Inc, Dla Land And Maritime, Mmi Amd, Quadri Corp, Military Standards Corp, Alliant Techsystems Operations Llc, Raytheon Technical Services Company, Lockheed Martin Corporation, National Semiconductor Corporation, Boeing Company The |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
CW841F | philips semiconductors ltd | microcircuit memory | RFQ |
802986-4 | raytheon company | microcircuit memory | RFQ |
JAN-M38510/20702BEX | military specifications | microcircuit memory | RFQ |
5962-3820702BEX | military specifications | microcircuit memory | RFQ |
M38510/20702BEB | philips semiconductors ltd | microcircuit memory | RFQ |
581R137H01 | northrop grumman systems corporation | microcircuit memory | RFQ |
HM1-7603 | intersil corporation | microcircuit memory | RFQ |
82S123N | texas instruments inc | microcircuit memory | RFQ |
S82S123F 883 | philips semiconductors ltd | microcircuit memory | RFQ |
308665-2 | northrop grumman systems corporation | microcircuit memory | RFQ |
581R504H21 | northrop grumman systems corporation | microcircuit memory | RFQ |
ROM PROM HEAD 013 | dla land and maritime | microcircuit memory | RFQ |
M38510/20702BEA | military specifications | microcircuit memory | RFQ |
HM1-7603-5 | intersil corporation | microcircuit memory | RFQ |
56S394-1 | intersil corporation | microcircuit memory | RFQ |
5331 1D 883B | mmi amd | microcircuit memory | RFQ |
1-2010-0003-21 | quadri corp | microcircuit memory | RFQ |
P161-00012-6029 | northrop grumman systems corporation | microcircuit memory | RFQ |
M38510/20702BEB | military specifications | microcircuit memory | RFQ |
5331-1J883B | mmi amd | microcircuit memory | RFQ |
477-1489-002 | military standards corp | microcircuit memory | RFQ |
82S123 | philips semiconductors ltd | microcircuit memory | RFQ |
7603-5 | intersil corporation | microcircuit memory | RFQ |
5962-3820702BEB | military specifications | microcircuit memory | RFQ |
802986-3 | raytheon company | microcircuit memory | RFQ |
581R504H25 | northrop grumman systems corporation | microcircuit memory | RFQ |
1201938 | alliant techsystems operations llc | microcircuit memory | RFQ |
4014533 | raytheon technical services company | microcircuit memory | RFQ |
7908868-02 | lockheed martin corporation | microcircuit memory | RFQ |
DM54S288J | national semiconductor corporation | microcircuit memory | RFQ |
5962-3820702BEA | military specifications | microcircuit memory | RFQ |
477-1649-001 | boeing company the | microcircuit memory | RFQ |
1201938-203 | alliant techsystems operations llc | microcircuit memory | RFQ |
MIL-M-38510/207 | military specifications | microcircuit memory | RFQ |
TBP18S030MJ | texas instruments inc | microcircuit memory | RFQ |
M38510/20702BEX | military specifications | microcircuit memory | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | PROGRAMMABLE AND BIPOLAR AND PROGRAMMED AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PROM |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/207 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5962-01-288-6901, 5962012886901 | ||||
5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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