Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-333-3430 (013333430) |
NCB Code | USA (01) |
Manufacturer | Microchip Technology Incorporated, Atmel Corporation, Austin Semiconductor Inc, Dla Land And Maritime, Truong Investment Llc, Intel Corporation, Raytheon Company, Northrop Grumman Systems Corporation, Advanced Micro Devices Inc, Waferscale Integration Inc, Thales Defense And Security Inc |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
27C512-15MR J | microchip technology incorporated | microcircuit memory | RFQ |
AT27C512R-15DC | atmel corporation | microcircuit memory | RFQ |
SMJ27C512-25JM | austin semiconductor inc | microcircuit memory | RFQ |
5962-8764801XA | dla land and maritime | microcircuit memory | RFQ |
AT27C512-15DC | truong investment llc | microcircuit memory | RFQ |
MD27C512-15 B | intel corporation | microcircuit memory | RFQ |
AT27C512R 15DM 883 | atmel corporation | microcircuit memory | RFQ |
5962-8764801BXA | dla land and maritime | microcircuit memory | RFQ |
G528349-103 | raytheon company | microcircuit memory | RFQ |
5962-8764801BXX | dla land and maritime | microcircuit memory | RFQ |
5962-8764801BXB | dla land and maritime | microcircuit memory | RFQ |
5962-87648 | dla land and maritime | microcircuit memory | RFQ |
G330510-303 | raytheon company | microcircuit memory | RFQ |
5A12318H03 | northrop grumman systems corporation | microcircuit memory | RFQ |
AM27C512 150 BXA | advanced micro devices inc | microcircuit memory | RFQ |
5962-8764801XX | dla land and maritime | microcircuit memory | RFQ |
WS27C512L-15DMB | waferscale integration inc | microcircuit memory | RFQ |
5962-8764801XB | dla land and maritime | microcircuit memory | RFQ |
115721-0001 | thales defense and security inc | microcircuit memory | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
ABKW | OVERALL HEIGHT | 0.357 INCHES MINIMUM AND 0.432 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 350.0 MILLIWATTS |
CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES MAXIMUM SUPPLY |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | EPROM |
Relevant Components for NSN - 5962-01-333-3430, 5962013333430 | ||||
5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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