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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-382-4918 (013824918) |
| NCB Code | USA (01) |
| Manufacturer | National Semiconductor Corporation, Rochester Electronics Llc, Raytheon Company |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| DM54S475AJ | national semiconductor corporation | microcircuit memory | RFQ |
| 54S475J 883 | rochester electronics llc | microcircuit memory | RFQ |
| 979734-104 | raytheon company | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | DISPLAY CONSO E/I FSCM 49956 |
| CZER | MEMORY DEVICE TYPE | PROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.2 VOLTS MINIMUM ABSOLUTE INPUT AND 5.5 VOLTS MAXIMUM ABSOLUTE INPUT AND-0.5 VOLTS MINIMUM ABSOLUTE OUTPUT AND 5.5 VOLTS MAXIMUM ABSOLUTE OUTPUT |
| CBBL | FEATURES PROVIDED | BIPOLAR AND SCHOTTKY AND LOW VOLTAGE AND HIGH IMPEDANCE AND PROGRAMMED AND W/OPEN COLLECTOR AND TESTED TO MIL-STD-883 |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| Relevant Components for NSN - 5962-01-382-4918, 5962013824918 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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