AS9120B, ISO 9001:2015, and FAA AC 0056B Accredited
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-406-2375 (014062375) |
| NCB Code | USA (01) |
| Manufacturer | Military Specifications, Dla Land And Maritime, Raytheon Company, White Electronic Designs Corpora, Micron Industries Corporation, Logic Devices Incorporated, Paradigm Technology Inc, Cypress Semiconductor Inc, Integrated Device Technology Inc |
| Part Number | Manufacturer | Item Name | RFQ |
|---|---|---|---|
| MIL-M-38510/293 | military specifications | microcircuit memory | RFQ |
| 5962-8866203NX | dla land and maritime | microcircuit memory | RFQ |
| M38510/29307BYA | military specifications | microcircuit memory | RFQ |
| G492096-233 | raytheon company | microcircuit memory | RFQ |
| M38510/29307BYB | military specifications | microcircuit memory | RFQ |
| 5962-8866203NB | dla land and maritime | microcircuit memory | RFQ |
| 5962-8866203NC | dla land and maritime | microcircuit memory | RFQ |
| EDI8834C55QB | white electronic designs corpora | microcircuit memory | RFQ |
| MT5C2568C-55883C | micron industries corporation | microcircuit memory | RFQ |
| L7C199DMB55 | logic devices incorporated | microcircuit memory | RFQ |
| 5962-88662 | dla land and maritime | microcircuit memory | RFQ |
| 5962-8866203NA | dla land and maritime | microcircuit memory | RFQ |
| M38510/29307BYX | military specifications | microcircuit memory | RFQ |
| PDM41256S55DB | paradigm technology inc | microcircuit memory | RFQ |
| CY7C199-55DMB | cypress semiconductor inc | microcircuit memory | RFQ |
| IDT71256S55TCB | integrated device technology inc | microcircuit memory | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.485 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 105.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE MEGAHERTZ |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 11.00 INPUT PICOFARADS MAXIMUM |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM ACCESS |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-406-2375, 5962014062375 | ||||
| 5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
| 5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
| 5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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