Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-468-5930 (014685930) |
NCB Code | USA (01) |
Manufacturer | Cypress Semiconductor Inc, Dla Land And Maritime |
Part Number | Manufacturer | Item Name | RFQ |
---|---|---|---|
CY7C335-83WMB | cypress semiconductor inc | microcircuit memory | RFQ |
5962-9451003MXB | dla land and maritime | microcircuit memory | RFQ |
5962-9451003MXA | dla land and maritime | microcircuit memory | RFQ |
5962-94510 | dla land and maritime | microcircuit memory | RFQ |
5962-9451003MXX | dla land and maritime | microcircuit memory | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.1 WATTS" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE" |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT" |
CZER | MEMORY DEVICE TYPE | EPROM" |
FEAT | SPECIAL FEATURES | GENERIC P/N 7C335, CIRCUIT FUNCTION-12 MACROCELL EPLD, FMAX3-83 MHZ, DATA RETENTION-10 YEARS MINIMUM, ENDURANCE-25 ERASE/WRITE CYCLES MINIMUM" |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.1 WATTS" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE" |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT" |
CZER | MEMORY DEVICE TYPE | EPROM" |
FEAT | SPECIAL FEATURES | GENERIC P/N 7C335, CIRCUIT FUNCTION-12 MACROCELL EPLD, FMAX3-83 MHZ, DATA RETENTION-10 YEARS MINIMUM, ENDURANCE-25 ERASE/WRITE CYCLES MINIMUM" |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
Relevant Components for NSN - 5962-01-468-5930, 5962014685930 | ||||
5998-01-628-9128 (5998016289128) | 5950-00-556-2628 (5950005562628) | 5910-00-502-7030 (5910005027030) | 5930-01-200-1187 (5930012001187) | |
5930-00-436-0040 (5930004360040) | 5998-01-022-6777 (5998010226777) | 5999-01-229-2868 (5999012292868) | 5930-00-451-8223 (5930004518223) | |
5980-01-237-3545 (5980012373545) | 5955-00-463-6952 (5955004636952) | 5975-01-438-5116 (5975014385116) | 5998-01-391-1476 (5998013911476) | |
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