Request a Competitive Quote for Part Number CY7C198-35DBM with NSN 5962014120260 by Cypress Semiconductor Inc!

Part Number: CY7C198-35DBM
Alternate P/N: CY7C19835DBM
NIIN: 014120260
Item Name : Microcircuit Memory
CAGE Code: 65786
FSG: 59 Electrical and Electronic Equipment Components
Country: USA
NCB Code: 01

Thank you for taking an interest in the top-caliber NSN products we feature here on AI NSN Parts. On this page, you can submit a quote request for part number CY7C198-35DBM, a Microcircuit Memory item that is manufactured by Cypress Semiconductor Inc. Listed alongside the NSN 5962014120260 within our database, part number CY7C198-35DBM is conveniently ready for purchase at any time.

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To ensure listings like part number CY7C198-35DBM are ready for swift installation, we have a rigorous quality assurance program in place. As such, we make it easy for you to inquire about popular NSNs like 5962-01-412-0260, as well as the many other Cypress Semiconductor Inc products produced under CAGE Code 65786 that interest you. For the benefit of our customers, we carefully vet every entity that we source from, guaranteeing that you only receive superior-caliber offerings in every order. With these dedications, you can always purchase from us with confidence. Furthermore, we also organize our stock based on Federal Supply Classes, so you can find popular items under FSCs like 5962 Microcircuits Electronic. Do not hesitate to submit the RFQ form below, and within 15 minutes or less of submission, one of our experts will reach out with a customized solution. Get started today and see why so many customers steadily depend on AI NSN Parts for their operational needs.

NSN Information for Part Number CY7C198-35DBM with NSN 5962-01-412-0260, 5962014120260

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-412-0260

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620141202600ND
CIICHCCESDPMICCriticalityENAC
7DA0
Part NumberISCRNVCRNCCHCCMSDSSADC
CY7C198-35DBM515

Characteristics Data of NSN 5962-01-412-0260, 5962014120260

MRCCriteriaCharacteristic
ADAQBODY LENGTH1.490 INCHES MAXIMUM"
ADATBODY WIDTH0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM"
ADAUBODY HEIGHT0.214 INCHES MINIMUM AND 0.224 INCHES MAXIMUM"
AEHXMAXIMUM POWER DISSIPATION RATING1.00 WATTS"
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS"
CQSJINCLOSURE MATERIALCERAMIC"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CTQXCURRENT RATING PER CHARACTERISTIC150.00 MILLIAMPERES MAXIMUM SUPPLY"
CWSGTERMINAL SURFACE TREATMENTSOLDER"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE"
CZEPCAPITANCE RATING PER CHARACTERISTIC150.00 INPUT PICOFARADS MAXIMUM"
CZEQTIME RATING PER CHACTERISTIC35.00 NANOSECONDS MAXIMUM ACCESS"
CZERMEMORY DEVICE TYPERAM"
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC"
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT"
ADAQBODY LENGTH1.490 INCHES MAXIMUM"
ADATBODY WIDTH0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM"
ADAUBODY HEIGHT0.214 INCHES MINIMUM AND 0.224 INCHES MAXIMUM"
AEHXMAXIMUM POWER DISSIPATION RATING1.00 WATTS"
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS"
CQSJINCLOSURE MATERIALCERAMIC"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CTQXCURRENT RATING PER CHARACTERISTIC150.00 MILLIAMPERES MAXIMUM SUPPLY"
CWSGTERMINAL SURFACE TREATMENTSOLDER"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE"
CZEPCAPITANCE RATING PER CHARACTERISTIC150.00 INPUT PICOFARADS MAXIMUM"
CZEQTIME RATING PER CHACTERISTIC35.00 NANOSECONDS MAXIMUM ACCESS"
CZERMEMORY DEVICE TYPERAM"
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC"
TTQYTERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT"

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