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Thank you for taking an interest in the top-caliber NSN products we feature here on AI NSN Parts. On this page, you can submit a quote request for part number 15-1326285-1, a Microcircuit Memory item that is manufactured by Gte Government Systems Corp. Listed alongside the NSN 5962013721262 within our database, part number 15-1326285-1 is conveniently ready for purchase at any time.
To ensure listings like part number 15-1326285-1 are ready for swift installation, we have a rigorous quality assurance program in place. As such, we make it easy for you to inquire about popular NSNs like 5962-01-372-1262, as well as the many other Gte Government Systems Corp products produced under CAGE Code 11293 that interest you. For the benefit of our customers, we carefully vet every entity that we source from, guaranteeing that you only receive superior-caliber offerings in every order. With these dedications, you can always purchase from us with confidence. Furthermore, we also organize our stock based on Federal Supply Classes, so you can find popular items under FSCs like 5962 Microcircuits Electronic. Do not hesitate to submit the RFQ form below, and within 15 minutes or less of submission, one of our experts will reach out with a customized solution. Get started today and see why so many customers steadily depend on AI NSN Parts for their operational needs.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-372-1262 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013721262 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| NH15-1326285-1 | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | RADIATION HARDENED AND ELECTROSTATIC SENSITIVE |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS NOMINAL ACCESS |
| ZZZX | DEPARTURE FROM CITED DESIGNATOR | MODIFIED FOR NUCLEAR HARDNESS IMPACT |
| AGAV | END ITEM IDENTIFICATION | HAC/RMPE REAC E/I FSCM 11293 |
| ZZZP | PURCHASE DESCRIPTION IDENTIFICATION | 11293-15-1326285-1 |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| FEAT | SPECIAL FEATURES | CBBL |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 67268-5962-8866203UA GOVERNMENT STANDARD |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| CQSZ | INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-11 MIL-M-38510 |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,SRAM,32K X 8(CY7C197) |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | 128KX8 |
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