Request a Competitive Quote for Part Number IDT71256L55TDB with NSN 5962015561877 by Integrated Device Technology Inc!

Part Number: IDT71256L55TDB
NIIN: 015561877
Item Name : Microcircuit Memory
CAGE Code: 0SP21
FSG: 59 Electrical and Electronic Equipment Components
Country: USA
NCB Code: 01

Thank you for taking an interest in the top-caliber NSN products we feature here on AI NSN Parts. On this page, you can submit a quote request for part number IDT71256L55TDB, a Microcircuit Memory item that is manufactured by Integrated Device Technology Inc. Listed alongside the NSN 5962015561877 within our database, part number IDT71256L55TDB is conveniently ready for purchase at any time.

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To ensure listings like part number IDT71256L55TDB are ready for swift installation, we have a rigorous quality assurance program in place. As such, we make it easy for you to inquire about popular NSNs like 5962-01-556-1877, as well as the many other Integrated Device Technology Inc products produced under CAGE Code 0SP21 that interest you. For the benefit of our customers, we carefully vet every entity that we source from, guaranteeing that you only receive superior-caliber offerings in every order. With these dedications, you can always purchase from us with confidence. Furthermore, we also organize our stock based on Federal Supply Classes, so you can find popular items under FSCs like 5962 Microcircuits Electronic. Do not hesitate to submit the RFQ form below, and within 15 minutes or less of submission, one of our experts will reach out with a customized solution. Get started today and see why so many customers steadily depend on AI NSN Parts for their operational needs.

NSN Information for Part Number IDT71256L55TDB with NSN 5962-01-556-1877, 5962015561877

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-556-1877

Item PartTypeName:

MICROCIRCUIT,MEMORY

5962015561877NA
CIICHCCESDPMICCriticalityENAC
AA0
Part NumberISCRNVCRNCCHCCMSDSSADC
IDT71256L55TDB593

Characteristics Data of NSN 5962-01-556-1877, 5962015561877

MRCCriteriaCharacteristic
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS"
CBBLFEATURES PROVIDEDHIGH SPEED"
CQSJINCLOSURE MATERIALCERAMIC"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CQZPINPUT CIRCUIT PATTERN28 INPUT"
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYCMOS STATIC RAM 256K"
CZEQTIME RATING PER CHACTERISTIC55.00 NANOSECONDS MAXIMUM ACCESS"
CZERMEMORY DEVICE TYPERAM"
CZZZMEMORY CAPACITY32K X 8"
FEATSPECIAL FEATURESMIL-STD-883, CLASS B COMPLIANT; LOW POWER"
TTQYTERMINAL TYPE AND QUANTITY28 PIN"
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS"
CBBLFEATURES PROVIDEDHIGH SPEED"
CQSJINCLOSURE MATERIALCERAMIC"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC"
CQZPINPUT CIRCUIT PATTERN28 INPUT"
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYCMOS STATIC RAM 256K"
CZEQTIME RATING PER CHACTERISTIC55.00 NANOSECONDS MAXIMUM ACCESS"
CZERMEMORY DEVICE TYPERAM"
CZZZMEMORY CAPACITY32K X 8"
FEATSPECIAL FEATURESMIL-STD-883, CLASS B COMPLIANT; LOW POWER"
TTQYTERMINAL TYPE AND QUANTITY28 PIN"

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