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Thank you for taking an interest in the top-caliber NSN products we feature here on AI NSN Parts. On this page, you can submit a quote request for part number MM1I-67204-55MB, a Microcircuit Memory item that is manufactured by Matra Harris Semiconductor. Listed alongside the NSN 5962014220377 within our database, part number MM1I-67204-55MB is conveniently ready for purchase at any time.
To ensure listings like part number MM1I-67204-55MB are ready for swift installation, we have a rigorous quality assurance program in place. As such, we make it easy for you to inquire about popular NSNs like 5962-01-422-0377, as well as the many other Matra Harris Semiconductor products produced under CAGE Code 0HGZ7 that interest you. For the benefit of our customers, we carefully vet every entity that we source from, guaranteeing that you only receive superior-caliber offerings in every order. With these dedications, you can always purchase from us with confidence. Furthermore, we also organize our stock based on Federal Supply Classes, so you can find popular items under FSCs like 5962 Microcircuits Electronic. Do not hesitate to submit the RFQ form below, and within 15 minutes or less of submission, one of our experts will reach out with a customized solution. Get started today and see why so many customers steadily depend on AI NSN Parts for their operational needs.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-422-0377 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014220377 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-8956802XX | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.000 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM ABSOLUTE OUTPUT" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 8.000 INPUT PICOFARADS MAXIMUM" |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.000 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.000 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM ABSOLUTE OUTPUT" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE" |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 8.000 INPUT PICOFARADS MAXIMUM" |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.000 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
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