Request a Competitive Quote for Part Number NSE8096 with NSN 5961011801944 by Microsemi Corporation!

Part Number: NSE8096

Manufacturer: Microsemi Corporation

NSN: 5961-01-180-1944

NIIN: 011801944

Item Name : Semiconductordeviceset

CAGE Code: 43611

FSC: 5961 Semiconductor Devices and Associated Hardware

FSG: 59 Electrical and Electronic Equipment Components

Country: USA

NCB Code: 01

Thank you for taking an interest in the top-caliber NSN products we feature here on AI NSN Parts. On this page, you can submit a quote request for part number NSE8096, a Semiconductordeviceset item that is manufactured by Microsemi Corporation. Listed alongside the NSN 5961011801944 within our database, part number NSE8096 is conveniently ready for purchase at any time.

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NSN Information for Part Number NSE8096 with NSN 5961-01-180-1944, 5961011801944

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5961-01-180-1944 Item PartTypeName: SEMICONDUCTOR DEVICE SET	5961	011801944	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
NSE8096	5	1	C			A

Characteristics Data of NSN 5961-01-180-1944, 5961011801944

MRC	Criteria	Characteristic
ABBH	INCLOSURE MATERIAL	METAL ALL TRANSISTOR
ABHP	OVERALL LENGTH	1.252 INCHES MAXIMUM 1ST TRANSISTOR
ABHP	OVERALL LENGTH	1.573 INCHES MAXIMUM 2ND TRANSISTOR
ABKW	OVERALL HEIGHT	0.328 INCHES MAXIMUM 2ND TRANSISTOR
ABKW	OVERALL HEIGHT	0.340 INCHES MAXIMUM 1ST TRANSISTOR
ABMK	OVERALL WIDTH	0.700 INCHES MAXIMUM 1ST TRANSISTOR
ABMK	OVERALL WIDTH	1.050 INCHES MAXIMUM 2ND TRANSISTOR
AGAV	END ITEM IDENTIFICATION	F-16 A/B AIRCRAFT
AKPV	MOUNTING FACILITY QUANTITY	2 ALL TRANSISTOR
ALAS	INTERNAL CONFIGURATION	JUNCTION CONTACT ALL TRANSISTOR
ALBA	ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE	COLLECTOR ALL TRANSISTOR
ASCQ	INTERNAL JUNCTION CONFIGURATION	NPN 2ND TRANSISTOR
ASCQ	INTERNAL JUNCTION CONFIGURATION	PNP 1ST TRANSISTOR
ASDD	COMPONENT FUNCTION RELATIONSHIP	MATCHED
ASKA	COMPONENT NAME AND QUANTITY	2 TRANSISTOR
AXGY	MOUNTING METHOD	UNTHREADED HOLE ALL TRANSISTOR
CTMZ	SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	180.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN 2ND TRANSISTOR AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN 2ND TRANSISTOR AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE,STATIC,COLLECTOR OPEN 2ND TRANSISTOR
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	275.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN 1ST TRANSISTOR AND 225.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN 1ST TRANSISTOR AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE,STATIC,COLLECTOR OPEN 1ST TRANSISTOR
CTQX	CURRENT RATING PER CHARACTERISTIC	1.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM 1ST TRANSISTOR AND 2.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM 1ST TRANSISTOR
CTQX	CURRENT RATING PER CHARACTERISTIC	20.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM 2ND TRANSISTOR AND 50.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM 2ND TRANSISTOR
CTRD	POWER RATING PER CHARACTERISTIC	250.0 WATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET 2ND TRANSISTOR
CTRD	POWER RATING PER CHARACTERISTIC	35.0 WATTS SMALL-SIGNAL INPUT POWER,COMMON-COLLECTOR PRESET 1ST TRANSISTOR
CTSG	MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 DEG CELSIUS AMBIENT AIR 1ST TRANSISTOR
CTSG	MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 DEG CELSIUS JUNCTION 2ND TRANSISTOR
TTQY	TERMINAL TYPE AND QUANTITY	2 PIN ALL TRANSISTOR AND 1 CASE ALL TRANSISTOR